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The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

U. Kaiser ,
P. D. Brown ,
I. Khodos ,
C. J. Humphreys ,
H. P. D. Schenk  and
W. Richter
U. Kaiser*
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
P. D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, CB2 3QZ Cambridge, United Kingdom
I. Khodos
Affiliation:
Institute of Microelectronics Technology and High Purity Materials RAS, 142432 Chernogolovka, Russia
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, CB2 3QZ Cambridge, United Kingdom
H. P. D. Schenk
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
W. Richter
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The effects of substrate cleaning, nitridation time, and substrate temperature in the range 800–1000 °C on the microstructure of AlN/Si(111) films grown by simultaneous plasma-assisted molecular beam epitaxy have been investigated. It has been demonstrated, using a combination of conventional and high-resolution transmission electron microscopy, that the interface structure, the film defect structure, and the film surface roughness are strongly related. The formation of single crystal 2H–AlN films with atomically flat surfaces occurs at 800 °C for conditions of 2.5 nm/min growth rate on very pure, atomically flat Si substrates.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 2036 - 2042
Copyright
Copyright © Materials Research Society 1999

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References

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