Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-19T07:19:59.946Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Cu concentration on the interfacial reactions between Ni and Sn–Cu solders

Published online by Cambridge University Press:  31 January 2011

W. T. Chen ,
C. E. Ho  and
C. R. Kao
W. T. Chen
Affiliation:
Department of Chemical & Materials Engineering, National Central University, Chungli City, Taiwan, Republic of China
C. E. Ho
Affiliation:
Department of Chemical & Materials Engineering, National Central University, Chungli City, Taiwan, Republic of China
C. R. Kao*
Affiliation:
Department of Chemical & Materials Engineering, National Central University, Chungli City, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

The eutectic 99.3Sn–0.7Cu solder (wt%, Sn–0.7Cu) is the most promising lead-free replacement for the eutectic Sn–Pb solder in wave-soldering applications. In this study, the effect of a small perturbation in the Cu concentration on the reaction between the Sn–0.7Cu solder and Ni was investigated. Specifically, four Sn–xCu solders (x = 0.2, 0.4, 0.7, and 1) were reacted with Ni at 250 °C. A slight variation in Cu concentration produced completely different reaction products. When the Cu concentration was low (x = 0.2), the reaction product was (Ni1–xCux)3Sn4. At high Cu concentrations (x = 0.7 and 1), the reaction product was (Cu1–yNiy)6Sn5. When the Cu concentration was in-between (x = 0.4), both (Ni1–xCux)3Sn4 and (Cu1–yNiy)6Sn5, formed. The above findings were rationalized using the Cu–Ni–Sn isotherm. The results of this study imply that the Cu concentration must be strictly controlled in industrial production to produce the desired intermetallic at the interface.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 263 - 266
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Bradley, E., Bath, J., Whitten, G., and Chada, S., Advanced Packaging, February, 34 (2000).Google Scholar
2.Frear, D.R., Jang, J.W., Lin, J.K., and Zhang, C., JOM June, 28 (2001).CrossRefGoogle Scholar
3.Kang, S.K., Rai, R.S., and Purushothaman, S., J. Electron. Maters. 25, 1113 (1996).CrossRefGoogle Scholar
4.Avillez, R.R. de, Lopes, M.F.S., and Silva, A.L.M., Mater. Sci. Eng. A 205, 209 (1996).CrossRefGoogle Scholar
5.Blair, H.D., Pan, T.Y., and Nicholson, J.M., 1998 Electron. Comp. & Tech. Conf. (IEEE, Piscataway, NJ, 1998), p. 209.Google Scholar
6.Lin, C.H., Thesis, M.S., National Tsing-Hua University, Hsing-Chu, Taiwan, Republic of China (2001).Google Scholar