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Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser

Published online by Cambridge University Press:  03 March 2011

S. Krishnan ,
M.I. Chaudhry  and
S.V. Babu
S. Krishnan*
Affiliation:
Department of Chemical Engineerng, Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699
M.I. Chaudhry*
Affiliation:
Department of Electrical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699
S.V. Babu
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699
*
a)Present address: Ultra Clean Technology, Menlo Park, California 94025.
b)Present address: CHEMI Laboratories, Watervliet, New York 12189.
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Abstract

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 8 , August 1995 , pp. 1884 - 1888
Copyright
Copyright © Materials Research Society 1995

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References

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