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Discussion on microstructure of chemical-vapor-deposited TiN films based on the calculated gaseous concentration distribution in the reactor

Published online by Cambridge University Press:  03 March 2011

Noboru Yoshikawa  and
Atsushi Kikuchi
Noboru Yoshikawa
Affiliation:
Department of Metallurgy, Faculty of Engineering, Tohoku University, Aramaki aza-Aoba, Aoba-ku, Sendai 980-77, Japan
Atsushi Kikuchi
Affiliation:
Department of Metallurgy, Faculty of Engineering, Tohoku University, Aramaki aza-Aoba, Aoba-ku, Sendai 980-77, Japan
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Abstract

TiN films were ehemical-vapor-deposited on the inner wall of a tubular reactor. Films deposited in the upstream region of the reactor consisted of small and sharp crystals with (111)-preferred orientation or random orientation. On the other hand, films deposited in the downstream region or at lower partial pressure of TiCl4 consisted of columnar crystals with (110)-preferred orientation, having polyhedral shapes on the surface. For the films deposited under different conditions at different axial positions, relationships were investigated among the temperature, the calculated concentrations on the substrate, and the degree of preferred orientation of the films. As a result, it was shown that formation of films with (110)-preferred orientation is related to the conditions of high temperature and low partial pressure of TiCl4. Films deposited at the higher gas flow rate had lower degrees of (110)-preferred orientation. Decrease in partial pressure of TiCl4 along the axial direction in the reactor was calculated to be smaller at higher gas flow rate, and provided suitable conditions for deposition of films having small and sharp crystals.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2801 - 2807
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Yee, K.K., Int. Met. Rev. 1, 19 (1978).Google Scholar
2Lee, H.H., Fundamentals of Microelectronics (McGraw-Hill International Edition, New York, 1990), p. 220.Google Scholar
3Pickering, M.A., Taylor, R.L., Goela, J. S., and Desai, H. D., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T. M., Gallois, B.M., and Warren, J. (Mater. Res. Soc. Symp. Proc. 250, Pittsburgh, PA, 1992), p. 145.Google Scholar
4Vandenbulcke, L. and Vuillard, G., J. Electrochem. Soc. 124 (12), 1937 (1977).CrossRefGoogle Scholar
5Lee, W.Y., Lackey, W.J., Agrawal, P.K., and Freeman, G.B., J. Am. Ceram. Soc. 74 (10), 2649 (1991).CrossRefGoogle Scholar
6Wahl, G., Chemical Vapour Deposition, Principles and Applications, edited by Hichtman, M.L. and Jensen, K. F. (Academic Press, New York, 1993), p. 591.Google Scholar
7Nakanishi, N., Mori, S., and Kato, E., J. Electochem. Soc. 137 (1), 322 (1990).CrossRefGoogle Scholar
8Bryant, W.A., J. Electrochem. Soc. 125 (9), 1534 (1978).CrossRefGoogle Scholar
9Moffat, H. and Jensen, K.F., J. Cryst. Growth 77, 108 (1986).CrossRefGoogle Scholar
10Coltrin, M.E., Kee, R.J., and Miller, J.A., J. Electrochem. Soc. 133, 1206 (1986).CrossRefGoogle Scholar
11Kleijn, C.R., J. Electrochem. Soc. 138 (7), 2190 (1991).CrossRefGoogle Scholar
12Desu, S.B. and Kalidindi, S.R., Jpn. J. Appl. Phys. 20 (7), 1310 (1990).CrossRefGoogle Scholar
13Hartman, P., Crystal Growth: An Introduction, edited by Hartman, P. (North Holland, Amsterdam, 1993).Google Scholar
14Bryant, W.A., J. Mater. Sci. 12, 1285 (1977).CrossRefGoogle Scholar
15Kramer, B. M. and Judd, P. K., J. Vac. Sci. Technol. A3, 2439 (1985).CrossRefGoogle Scholar
16Hedge, R.I., Fiordalice, R. E.R.W., Travis, E.O., and Tobin, P.J., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T. M., Gallois, B. M., and Warren, J. (Mater. Res. Soc. Symp. Proc. 250, Pittsburgh, PA, 1992), p. 199.Google Scholar
17Itoh, H., Kato, K., and Sugiyama, K., J. Mater. Sci. 21, 751 (1986).CrossRefGoogle Scholar
18Cheng, D.J., Sun, W. P., and Hon, M.H., Thin Solid Films 146, 45 (1987).CrossRefGoogle Scholar
19Yoshikawa, N., Higashino, K., and Kikuchi, A., Mater. Trans. JIM 35, 610 (1994).CrossRefGoogle Scholar
20Yoshikawa, N. and Kikuchi, A., in Polycrystalline Thin Films—Structure, Texture, Properties and Applications, edited by Barmak, K., Parker, M. A., Floro, J. A., Sinclair, R., and Smith, D. A. (Mater. Res. Soc. Symp. Proc. 343, Pittsburgh, PA, 1994), p. 741.Google Scholar
21Lotgering, F.K., J. Inorg. Nucl. Chem. 9, 113 (1959).CrossRefGoogle Scholar