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Directed block copolymer self-assembly for nanoelectronics fabrication

Published online by Cambridge University Press:  28 January 2011

Daniel J.C. Herr
Daniel J.C. Herr*
Affiliation:
Semiconductor Research Corporation, Research Triangle Park, North Carolina 27709
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

This paper provides an overview of directed self-assembly (DSA) options that exhibit potential for enabling extensible high-volume patterning of nanoelectronics devices. It describes the current set of research requirements, which a DSA technology must satisfy to warrant insertion consideration, and summarizes the state-of-the art. The primary focus is on chemical patterning and graphoepitaxial approaches to directing block copolymer (BCP) based assembly. These options exhibit the nearest-term potential, among the emerging DSA technologies, for satisfying projected International Technology Roadmap for Semiconductors (ITRS) patterning requirements. The paper concludes with a selected set of additional challenges, which represent potential barriers to the integration of directed BCP patterning into a nanoelectronics manufacturing line, as well as a few emerging application opportunities for related functional materials. A glossary of acronyms and terms may be found at the end of this manuscript.

Keywords

Self assemblyLithography (Deposition)Nanoscale
Type
Reviews
Information
Journal of Materials Research , Volume 26 , Issue 2: Focus Issue: Self-Assembly and Directed Assembly of Advanced Materials , 28 January 2011 , pp. 122 - 139
Copyright
Copyright © Materials Research Society 2011

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