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Different routes to the formation of C54 TiSi2 in the presence of surface and interface molybdenum: A transmission electron microscopy study

Published online by Cambridge University Press:  31 January 2011

Z-B. Zhang ,
S-L. Zhang ,
D-Z. Zhu ,
H-J. Xu  and
Y. Chen
Z-B. Zhang
Affiliation:
Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, P.O. Box 800–204, 201800 Shanghai, People's Republic of China
S-L. Zhang
Affiliation:
Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, P.O. Box 800–204, 201800 Shanghai, People's Republic of China
D-Z. Zhu*
Affiliation:
Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, P.O. Box 800–204, 201800 Shanghai, People's Republic of China
H-J. Xu
Affiliation:
Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, P.O. Box 800–204, 201800 Shanghai, People's Republic of China
Y. Chen
Affiliation:
Department of Materials Science, Fudan University, 200433 Shanghai, People's Republic of China
*
a)Address all correspondence to this author.[email protected]
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Abstract

Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 °C. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si2 grains. No C49 grains were detected. Raising the annealing temperature to 600 °C led to the formation of C54 TiSi2 at the expense of Ti5Si3, and the interfacial C40 (Mo,Ti)Si2 also began to transform into C54 (Mo,Ti)Si2 at 600 °C. When the Mo was deposited on top of Ti, the silicide film was almost solely composed of C49 TiSi2 at 600 °C. However, a small amount of (Mo,Ti)5Si3 was still present in the vicinity of the sample surface. Upon annealing at 650 °C, only the C54 phase was found throughout the entire TiSi2 layer with a surface (Mo,Ti)Si2 on top of TiSi2. Hence, it was unambiguously shown that in the presence of surface versus interface Mo, different routes were taken to the formation of C54 TiSi2.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 4 , April 2002 , pp. 784 - 789
Copyright
Copyright © Materials Research Society 2002

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References

1Mouroux, A., Zhang, S-L., Kaplan, W., Nygren, S., Östling, M., and Petersson, C.S., Appl. Phys. Lett. 69, 975 (1996).CrossRefGoogle Scholar
2Mouroux, A., Zhang, S-L., Kaplan, W., Nygren, S., Östling, M., and Petersson, C.S., in Advanced Metallization for ULSI, edited by Tu, K.N., Mayer, J.W., Poate, J.M., and Chen, L.J. (Mater. Res. Soc. Symp. Proc., 427, Pittsburgh, PA, 1996), pp. 511–516.Google Scholar
3Mouroux, A., Zhang, S-L., and Petersson, C.S., Phys. Rev. B56,10614 (1997).CrossRefGoogle Scholar
4Cabral, C. Jr., Clevenger, L.A., Harper, J.M.E., d'Heurle, F.M., Roy, R.A., Saenger, K.L., Miles, G.L., and Mann, R.W., J. Mater Res. 12, 304 (1997).CrossRefGoogle Scholar
5Mann, R.W., Miles, G.L., Knotts, T.A., Rakowski, D.W., Clevenger, L.A., Harper, J.M.E., d'Heurle, F.M., and Cabral, C. Jr., Appl. Phys. Lett. 67, 3729 (1995).CrossRefGoogle Scholar
6Kittl, J.A., Gribelyuk, M.A., and Samavedam, S.B., Appl. Phys. Lett. 73, 900 (1998).CrossRefGoogle Scholar
7Roux, M., Mouroux, A., and Zhang, S-L., in Advanced Interconnects and Contacts, edited by Edelstein, D.C., Kikkawa, T., Öztürk, M.C., Tu, K-N., and Weitzman, E.J. (Mater. Res. Soc. Symp. Proc., 564, Warrendale, PA, 1999), pp. 53–58.Google Scholar
8Cabral, C. Jr., Clevenger, L.A., Harper, J.M.E., d'Heurle, F.M., Roy, R.A., Lavoie, C., Miles, G.L., Mann, R.W., and Nakos, J.S., Appl. Phys. Lett. 71, 3531 (1997).CrossRefGoogle Scholar
9Wlodek, K., Mouroux, A., Zhang, S-L., and Petersson, C.S., Microelectron. Eng. 37, 461 (1997).Google Scholar
10Ohmi, S. and Tung, R.T., J. Appl Phys. 86, 3655 (1999).CrossRefGoogle Scholar
11Clevenger, L.A., Mann, R.W., Miles, G.L., Harper, J.M.E., Cabral, C. Jr., d'Heurle, F.M., Domenicucci, A., and Saenger, K.L. (unpublished).Google Scholar
12Houtum, H.J.W. van, Raaijmakers, I.J.M.M., and Menting, T.J.M., J. Appl. Phys. 61, 3116 (1987).CrossRefGoogle Scholar
13Mouroux, A., Epicier, T., Zhang, S-L., and Pinard, P., Phys. Rev. B60, 9165 (1999).CrossRefGoogle Scholar
14Mouroux, A., Reynard, B., and Zhang, S-L., in Advanced Metallisation and Interconnect Systems for ULSI Application in 1997, edited by Cheung, R., Klein, J., Tsubouchi, K., Murakami, M., and Kobayashi, N. (Mater. Res. Soc. Symp. Proc., V–13, Warrendale, PA, 1998), pp. 605–609.Google Scholar
15Goldschmidt, H.J., Interstitial Alloys (Butterworths, London, United Kingdom 1967), pp. 322–330.CrossRefGoogle Scholar
16d'Heurle, F.M., in VLSI Science and Technology, edited by Dell'Oca, C. and Bullies, W.M. (The Electrochemical Society, Pennington, NJ, 1982), pp. 194–212.Google Scholar
17Mouroux, A., Ph.D. Thesis, Kungliga Tekniska Hügskolan, Stockholm, Sweden (1999).Google Scholar
18Zhang, S-L. and d'Heurle, F.M., Appl. Phys. Lett. 76, 1831 (2000).CrossRefGoogle Scholar
19Zhang, S-L., Zhang, Z-B., Zhu, D-Z., and Xu, H-J., J. Appl. Phys. 89, 1641 (2001).CrossRefGoogle Scholar
20Zhang, S-L., Lavoie, C., Cabral, C. Jr. , Harper, J.M.E., d'Heurle, F.M., and Jordan-Sweet, J., J. Appl. Phys. 85, 2617 (1999).CrossRefGoogle Scholar
21Mouroux, A., Roux, M., Zhang, S-L., d'Heurle, F.M., Cabral, C. Jr., Lavoie, C., and Harper, J.M.E., J. Appl. Phys. 86, 2323 (1999).CrossRefGoogle Scholar
22Bonoli, F., Iannuzzi, M., Miglio, L., and Meregalli, V., Appl. Phys. Lett. 73, 1964 (1998).CrossRefGoogle Scholar