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Dielectric properties of epitaxial KNbO3 ferroelectric thin films

Published online by Cambridge University Press:  31 January 2011

Soma Chattopadhyay ,
B. M. Nichols ,
Jin-Ha Hwang ,
T. O. Mason  and
B. W. Wessels
Soma Chattopadhyay
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B. M. Nichols
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
Jin-Ha Hwang
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
T. O. Mason
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

The dielectric response of KNbO3 epitaxial ferroelectric thin films was measured as a function of bias, frequency, and temperature. Thin films with a thickness of 80 to 350 nm were deposited on spinel substrates by low-pressure metalorganic chemical vapor deposition. Bias dependence measurements showed hysteresis in the dielectric response. The dielectric constant decreased with bias, and the tunability was calculated to be between 35% and 42% for an applied field of 7 MV/cm. The frequency dependence of the dielectric constant followed a power law. A pronounced thickness effect was observed in the dielectric response, especially at the Curie temperature. With decreasing thickness, the dielectric constant and the loss tangent decreased. A diffuse ferroelectric phase transition was observed for films with a thickness less than 350 nm.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 275 - 278
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1.Holman, R.L., Johnson, L.M. Althouse, and Skinner, D.P., Opt. Eng. 26, 134 (1987).CrossRefGoogle Scholar
2.Nystrom, M.J., Wessels, B.W., Chen, J., and Marks, T.J., Appl. Phys. Lett. 68, 761 (1996).CrossRefGoogle Scholar
3.Hoerman, B.H., Nichols, B.M., Nystrom, M.J., and Wessels, B.W., Appl. Phys. Lett. 75, 2707 (1999).CrossRefGoogle Scholar
4.Shirane, G., Danner, H., Pavlovic, A., and Pepinsky, R., Phys. Rev. 93, 672 (1954).CrossRefGoogle Scholar
5.Dubernet, P. and Ravez, J., Ferroelectrics 211, 51 (1998).CrossRefGoogle Scholar
6.Ding, S. and Shen, J., J. Am. Ceram. Soc. 73, 1449 (1990).CrossRefGoogle Scholar
7.Zgonik, M., Nakagawa, K., and Gunter, P., J. Opt. Soc. Am. B 12, 1416 (1995).CrossRefGoogle Scholar
8.Lee, C. and Lee, S., Ferroelectr. Lett. 24, 131 (1998).CrossRefGoogle Scholar
9.Errandonea, D. and Moya, E., Phys. Status Solidi B 203, R1 (1997).3.0.CO;2-G>CrossRefGoogle Scholar
10.Kim, S.H., Yang, Y.S., Lee, S.J., Cha, J.H., Chae, B.G., Joo, H.J., and Jang, M.S., J. Korean. Phys. Soc. 29, S785 (1996).Google Scholar
11.Wang, C.Z., Yu, R.C., and Krakauer, H., Ferroelectrics 194, 97 (1997).CrossRefGoogle Scholar
12.Hoerman, B.H., Ford, G.M., Kaufman, L.D., and Wessels, B.W., Appl. Phys. Lett. 73, 2248 (1998).CrossRefGoogle Scholar
13.Farnell, G.W., Cermak, I.A., Silvestar, P., and Wong, S.K., IEEE Trans. Sonics Ultrason. SU–17, 188 (1970).CrossRefGoogle Scholar
14.Jonscher, A.K., Dielectric Relaxation in Solids (Chelsea Dielectrics, London, United Kingdom, 1983).Google Scholar
15.Wessels, B.W., Nystrom, M.J., Chen, J., Studebaker, D., and Marks, T.J., in Epitaxial Oxide Thin Films II, edited by Speck, J.S., Fork, D.K., Wolf, R.M., and Shiosaki, T. (MRS Symp. Proc. 401, Pittsburgh, PA, 1996), p. 211.Google Scholar