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Dielectric properties of BaTiO3–BaZrO3 ceramics under a high electric field

Published online by Cambridge University Press:  31 January 2011

T. Tsurumi*
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan.
Y. Yamamoto
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan.
H. Kakemoto
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan.
S. Wada
Affiliation:
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan.
H. Chazono
Affiliation:
R&D Materials Department, General R&D Laboratories, Taiyo Yuden Co., Ltd., Haruna, Gunma 370–33, Japan
H. Kishi
Affiliation:
R&D Materials Department, General R&D Laboratories, Taiyo Yuden Co., Ltd., Haruna, Gunma 370–33, Japan
*
a)Address all correspondence to this author.[email protected]
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Abstract

Multilayered ceramic capacitors (MLCCs) with BaTiO3–BaZrO3 (BTZ) dielectric layers were fabricated, and the dielectric permittivity of the BTZ layers with different thicknesses in MLCCs was measured. The dielectric permittivity of the BTZ ceramic disk was also measured under various ac electric fields. The variation in the dielectric behaviors with the thickness of BTZ layers in MLCCs was explained by the ac-field dependence of dielectric permittivity observed in the BTZ ceramic disk. The ac-field dependence of dielectric permittivity of BTZ was markedly observed below the temperature of a broad maximum in the dielectric permittivity versus temperature (є versus T) curve. It was found that the temperature of the broad maximum shifted to the low-temperature side and the peak shape became asymmetric with increasing ac field. These changes in the dielectric properties under high ac fields were explained by a model of relaxors with the concept of the formation of polar microregions (PMRs) and the freezing of fluctuating ipoles in PMRs.

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Articles
Copyright
Copyright © Materials Research Society 2002

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