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The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas

Published online by Cambridge University Press:  31 January 2011

G. C. Chen ,
C. Sun ,
R. F. Huang ,
L. S. Wen ,
D. Y. Jiang  and
X. Z. Yao
G. C. Chen*
Affiliation:
Institute of Metal Research, Academia Sinica, Shenyang, People's Republic of China
C. Sun
Affiliation:
Institute of Metal Research, Academia Sinica, Shenyang, People's Republic of China
R. F. Huang
Affiliation:
Institute of Metal Research, Academia Sinica, Shenyang, People's Republic of China
L. S. Wen
Affiliation:
Institute of Metal Research, Academia Sinica, Shenyang, People's Republic of China
D. Y. Jiang
Affiliation:
Institute of Physics, Academia Sinica, Beijing, People's Republic of China
X. Z. Yao
Affiliation:
Institute of Physics, Academia Sinica, Beijing, People's Republic of China
*
a)Address all correspondence to this author. Present address: 106 Group, Institute of Physics, Beijing, People's Republic of China. [email protected]
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Abstract

A (110)-oriented diamond film was deposited by hot filament chemical vapor deposition with H2 and CH4 separately introduced into the reactive zone. The film with a degree of orientation I(220)/I(111) of more than 200% and deposition rate of 2–3 μm/h was obtained for a deposition time of 17 h. The long deposition time enlarged the grain size and enhanced the degree of orientation, but too long a deposition time resulted in random growth. The temperature field was measured and also calculated using a simple model. Both results showed that a temperature field existed with varied gradients along the normal of substrate surface. The (110)-oriented diamond film was deposited in the zone with negative temperature gradient. The change in orientation occurring for long deposition times was ascribed to the change of temperature gradient.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 8 , August 1999 , pp. 3196 - 3199
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Augus, J.C., Thin Solid Film 216, 126 (1992).Google Scholar
2.Ikoma, K. and Yamanaka, M., J. Appl. Phys. 74, 3519 (1993).CrossRefGoogle Scholar
3.Spetch, E.D., Clausing, R.E., and Heatheraly, L., J. Mater. Res. 5, 2351 (1990).Google Scholar
4.Wild, C., Herres, N., and Koidl, P., J. Appl. Phys. 68, 973 (1990).CrossRefGoogle Scholar
5.Clausing, R.E., Heatherly, L., Horton, L.L., Spetch, E.D., Begum, G.M., and Wang, Z.L., Diamond Relat. Mater. 1, 411 (1992).CrossRefGoogle Scholar
6.Tamor, M.A. and Everson, M.P., J. Mater. Res. 9, 1839 (1994).CrossRefGoogle Scholar
7.Kobashi, K., Nishimura, K., Miyata, K., Kumagai, K., and Nakaue, A., J. Mater. Res. 5, 2469 (1990).CrossRefGoogle Scholar
8.Hirabayashi, K., Kurihara, N.I., Ohtake, N., and Yoshikawa, M., Jpn. J. Appl. Phys. 31, 355 (1992).CrossRefGoogle Scholar
9.Hwang, J., Zhang, K., Kwak, B.S., Erbil, A., and Feng, Z.C., J. Mater. Res. 5, 2334 (1990).CrossRefGoogle Scholar
10.Zhang, X.X., Shi, T.S., Wang, J.X., and Zhang, X.K., J. Crystal Growth 155, 66 (1995).CrossRefGoogle Scholar
11.Ravi, K.V., J. Mater. Res. 7, 384 (1992).CrossRefGoogle Scholar
12.Geis, M.W., Appl. Phys. Lett. 55, 550 (1989).CrossRefGoogle Scholar
13.Goodwin, D.G. and Gavillet, G.G., J. Appl. Phys. 68, 6393 (1990).CrossRefGoogle Scholar
14.Rau, H. and Picht, F., J. Mater. Res. 8, 2250 (1993).CrossRefGoogle Scholar
15.Chu, C.J., D'Evelyn, M.P., Hauge, H., and Margrave, J.L., J. Mater. Res. 5, 2405 (1990).CrossRefGoogle Scholar
16.Kobashi, K., Nishimura, K., Kawate, Y., and Horiuchi, T., Phys. Rev. B38, 40667 (1988).Google Scholar
17.Park, Y.S., Kim, S.H., and Lee, J.W., Jpn. J. Appl. Phys. 33, 6320 (1994).CrossRefGoogle Scholar
18.Rau, H. and Picht, F., J. Mater. Res. 7, 934 (1992).CrossRefGoogle Scholar
19.Ravi, K.V., J. Mater. Res. 7, 384 (1990).CrossRefGoogle Scholar
20.Boundary Layer Theory edited by H. Schlichting, translated by J. Kestin (Pergamon Press Ltd. and McGraw-Hill Book Co., Inc., 1955); a) Chap. VII; b) P143.Google Scholar
21.Chu, C.J., D'Evelyn, M.P., Hauge, H., and Margrave, J.L., J. Appl. Phys. 70, 1695 (1991).CrossRefGoogle Scholar
22.Rau, H. and Picht, F., J. Mater. Res. 8, 2250 (1993).CrossRefGoogle Scholar