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Defects in GaP film grown on Si(211) by molecular beam epitaxy

Published online by Cambridge University Press:  29 June 2016

Don W. Chung ,
M. Inada  and
H. Kroemer
Don W. Chung
Affiliation:
Department of Materials Engineering, San Jose State University, Washington Square, San Jose, California 95192
M. Inada
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
H. Kroemer
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
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Abstract

Galium phosphorus films grown on (211 )Si by molecular beam epitaxy have been investigated using a transmission electron microscope. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwins. The misfit dislocations are of the 60° type with Burgers vectors of a/2 ‹110›, and the stacking faults are intrinsic in nature and bounded by Shockley partials and stair-rod partial dislocations. The habit planes of these defect structures were found to depend solely on the crystalline growth orientation with respect to the substrate orientation. A possible mechanism of the formation and growth of these misfit defects has been proposed for the present growth orientation.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 6 , December 1986 , pp. 803 - 810
Copyright
Copyright © Materials Research Society 1986

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