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Crystallization behavior in a low temperature acetate process for perovskite PbTiO3, Pb(Zr, Ti)O3, and (Pb1−x, Lax) (Zry, Ti1−y)1−x/4O3 bulk powders

Published online by Cambridge University Press:  31 January 2011

C.T. Lin ,
B.W. Scanlan ,
J.D. McNeill ,
J.S. Webb ,
Li Li ,
R.A. Lipeles ,
P.M. Adams  and
M.S. Leung
C.T. Lin*
Affiliation:
Department of Chemistry, Northern Illinois University, DeKalb, Illinois 60115-2862
B.W. Scanlan
Affiliation:
Department of Chemistry, Northern Illinois University, DeKalb, Illinois 60115-2862
J.D. McNeill
Affiliation:
Department of Chemistry, Northern Illinois University, DeKalb, Illinois 60115-2862
J.S. Webb
Affiliation:
Department of Chemistry, Northern Illinois University, DeKalb, Illinois 60115-2862
Li Li
Affiliation:
Department of Chemistry, Northern Illinois University, DeKalb, Illinois 60115-2862
R.A. Lipeles
Affiliation:
The Aerospace Corporation, P.O. Box 92957, Los Angeles, California 90009-2957
P.M. Adams
Affiliation:
The Aerospace Corporation, P.O. Box 92957, Los Angeles, California 90009-2957
M.S. Leung
Affiliation:
The Aerospace Corporation, P.O. Box 92957, Los Angeles, California 90009-2957
*
a)Author to whom correspondence should be addressed.
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Abstract

An aqueous, metallo-organic precursor for PbTiO3 (PT), Pb(Zr, Ti)O3 (PZT), and (Pb1−x, Lax) (Zry, Ti1−y)1−x/4O3 (PLZT) ceramic powders has been developed employing the acetate complexes of Pb2+, La3+, Zr4+, and Ti4+. The crystallization behavior (e.g., degree of crystallization and crystallite size) was examined over the temperature range of 400–700 °C with concentrations of excess lead varying from 0–5% using x-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy techniques. It was found that PT, PZT, and PLZT crystallize at temperatures as low as 450 °C, 500 °C, and 500 °C, respectively, and the excess lead required for crystallization of the perovskite phase is ⋚1%. Intermolecular mixing among acetate precursors via chelating and bridging structures was evident and appeared to be responsible for the low crystallization temperatures. The process is compared to the current sol-gel methods for its possible use in thin film ferroelectric manufacture.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 9 , September 1992 , pp. 2546 - 2554
Copyright
Copyright © Materials Research Society 1992

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