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Crystalline perfection of chemical vapor deposited diamond films

Published online by Cambridge University Press:  31 January 2011

A. V. Hetherington ,
C. J. H. Wort  and
P. Southworth
A. V. Hetherington
Affiliation:
Plessey Research Caswell Ltd., Towcester, Northants, NN12 8EQ, United Kingdom
C. J. H. Wort
Affiliation:
Plessey Research Caswell Ltd., Towcester, Northants, NN12 8EQ, United Kingdom
P. Southworth
Affiliation:
Plessey Research Caswell Ltd., Towcester, Northants, NN12 8EQ, United Kingdom
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Abstract

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Type
Materials Communications
Information
Journal of Materials Research , Volume 5 , Issue 8 , August 1990 , pp. 1591 - 1594
Copyright
Copyright © Materials Research Society 1990

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