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Crystal growth of layered perovskite Sr2Nb2O7 and Sr2Ta2O7 film by the sol-gel technique

Published online by Cambridge University Press:  31 January 2011

Kumi Okuwada ,
Shin-ichi Nakamura  and
Hiroshi Nozawa
Kumi Okuwada
Affiliation:
Microelectronics Engineering Laboratory, Toshiba Corporation, Kawasaki 210-8582, Japan
Shin-ichi Nakamura
Affiliation:
Research and Development Center, Toshiba Corporation, Kawasaki 210-8582, Japan
Hiroshi Nozawa
Affiliation:
Department of Energy Science and Technology, Kyoto University, Kyoto, 606-8501, Japan
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Abstract

High dielectric and low loss capacitor thin films of Sr2Nb2O7 (SN), Sr2Ta2O7 (ST), and their solid solution Sr2(Nbx, Ta1−x)2O7 (SNT) were investigated using the sol-gel technique. The SN film grows with the (0n0) orientation in the case of heating at over 700 °C. Heat treatment at a lower temperature results in the polycrystal ST-type structure. The SNT at x < 50% also resulted in the ST type. The dielectric constant for the SN film was 45, within 10% variation at ±0.5 MV/cm. Dielectric loss (tan δ) was 0.3–0.5%. The small variation in dielectric constant and the paraelectricity with low loss are suitable for capacitor applications.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 855 - 860
Copyright
Copyright © Materials Research Society 1999

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References

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