Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-26T16:55:38.664Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical vapor deposition of α – ZrP whiskers

Published online by Cambridge University Press:  31 January 2011

S. Motojima ,
S. Hirano ,
K. Kurosawa  and
H. Iwanaga
S. Motojima
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
S. Hirano
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
K. Kurosawa
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
H. Iwanaga
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
Get access

Abstract

α–ZrP whiskers have been prepared from ZrCl4 + PCl3 + H2 + Ar gas mixtures at 1050–1250 °C using the mixed metal impurity-activated chemical vapor deposition process. The growth conditions, morphology, growth mechanism, and some properties were examined. The mixed impurities of Si + Pt and Si + Pd were very effective for the ZrP whisker growth with 8–12 mm (avg. 10 mm) long whiskers being obtained at 1300 °C for 1 h. The growth direction of the whiskers having hexagonal and square cross sections were along the c-axis and a-axis, respectively. The whiskers were very stable to an 80 min immersion in a concentrated HCl solution.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 5 , May 1996 , pp. 1157 - 1163
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ripley, R. L., J. Less-Common Met. 4, 496–503 (1962).CrossRefGoogle Scholar
2.Motojima, S., Wakamatsu, T., Takahashi, Y., and Sugiyama, K., J. Electrochem. Soc. 123, 290–295 (1976).CrossRefGoogle Scholar
3.Motojima, S., Takahashi, Y., and Sugiyama, K., J. Cryst. Growth 30, 1–8 (1975).CrossRefGoogle Scholar
4.Motojima, S., Izushi, T., Sugiyama, K., and Takahashi, Y., Bull. Chem. Soc. Jpn. 49, 2122–2128 (1976).CrossRefGoogle Scholar
5.Motojima, S., Naito, M., and Hayashi, M., J. Cryst. Growth 73, 111–116 (1985).CrossRefGoogle Scholar
6.Motojima, S. and Higashi, T., J. Cryst. Growth 71, 639–647 (1985).CrossRefGoogle Scholar
7.van Wazer, J. R., Phosphorus and Its Compounds (Wiley Interscience, New York, 1958), Vol. 1, pp. 123–175.Google Scholar
8.Aronson, B., Lundstrom, T., and Rundquist, S., Borides, Silicides and Phosphides (Wiley, New York, 1965).Google Scholar
9.Lundstrom, T., Acta Chem. Scand. 20, 1712 (1966).CrossRefGoogle Scholar
10.Schonberg, N., Acta Chem. Scand. 8, 226–239 (1954).CrossRefGoogle Scholar
11.Schonberg, N., Acta Chem. Scand. 8, 1460–1465 (1954).CrossRefGoogle Scholar
12.Strotzer, E. F., Biltz, W., and Meisel, K., Z. Anorg. Allg. Chem. 239, 216–224 (1938).CrossRefGoogle Scholar
13.Motojima, S., Hasegawa, I., Hirano, S., Kurosawa, K., and Iwanaga, H., Mater. Lett. 22, 255–257 (1995).CrossRefGoogle Scholar
14. JCPD No. 16–32.Google Scholar