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Chemical vapor deposition of barium strontium titanate thin films using direct liquid injection of a single cocktail solution with Ba(methd)2, Sr(methd)2, and Ti(MPD)(tmhd)2

Published online by Cambridge University Press:  31 January 2011

Jung-Hyun Lee
Affiliation:
Laboratory for Advanced Materials Processing, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
Shi-Woo Rhee
Affiliation:
Laboratory for Advanced Materials Processing, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
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Abstract

Deposition characteristics of (Ba,Sr)TiO3 (BST) thin films by metalorganic chemical vapor deposition with a mixture solution were investigated. Ba(methd)2 (methd = methoxyethoxytetramethylheptanedionate), Sr(methd)2, and Ti(MPD)2(tmhd)2 (MPD = methylpentanedioxy, tmhd = tetramethylheptanedionate) were dissolved together in methanol solvent. Mass spectrometry showed that Ba(methd)2 was less aggregated than Ba(tmhd)2-tetraglyme adduct (tetraglyme = tetraethylene glycol dimethyl ether) in the gas phase. Similar results were obtained from Sr precursors. Step coverage and electrical properties of the BST films were investigated as a function of deposition temperature from 350 to 600 °C. With the increase of the deposition temperature up to 500 °C, Ti composition in the films was increased, but Ba and Sr remained almost constant, and the step coverage became poor. Also, leakage current density and SiO2 equivalent oxide thickness was reduced as the deposition temperature increased. Poor incorporation of Ti below the deposition temperature of 500 °C was observed.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Hwang, C.S., Mater. Sci. Eng. B56, 178 (1988).Google Scholar
2.Scott, J.F., Kammerdiner, L., Parris, M., Traynor, S., Ottenbacher, V., Shawabkeh, A., and Oliver, W.F., J. Appl. Phys. 64, 787 (1988).CrossRefGoogle Scholar
3.Horikawa, H., Mikami, N., Makita, T., Tanimura, J., Kataoka, M., Sato, K., and Nunoshita, M., Jpn. J. Appl. Phys. 32, 4126 (1993).CrossRefGoogle Scholar
4.Lee, W.J., Park, I.K., Jang, G.E., and Kim, H.G., Jpn. J. Appl. Phys. 34, 196 (1995).CrossRefGoogle Scholar
5.Kang, C.S., Cho, H.J., Lee, B.T., and Lee, K.H., Jpn. J. Appl. Phys. 36, 6946 (1997).CrossRefGoogle Scholar
6.No, K.S., Lee, J.S., Song, H.W., and Lee, W.J., in Ferroelectric Thin Films V, edited by Desu, S.B., Ramesh, R., Tuttle, B.A., Jones, R.E., and Yoo, I.K. (Mater. Res. Soc. Symp. Proc. 433, Pittsburgh, PA, 1996), p. 9.Google Scholar
7.Gardiner, R.A., Gordon, D.C., Stant, G.T., and Vaartstra, B.A., Chem. Mater. 6, 1967 (1994).CrossRefGoogle Scholar
8.Gardiner, R.A., Brown, D.W., Kirlin, P.S., and Rheingold, A.A., Chem. Mater. 3, 1053 (1991).CrossRefGoogle Scholar
9.Lee, J.S., Song, H.W., Kim, K.S., Yu, B.G., Jeong, Y.H., and No, K.S., J. Vac. Sci. Technol. A15(1), 72 (1997).CrossRefGoogle Scholar
10.Prozdov, A.A. and Trojanov, S.I., Polyhedron 11(22), 2877 (1992).CrossRefGoogle Scholar
11.Lee, J.H. and Rhee, S.W., J. Electrochem. Soc. 146, (1999, in press)Google Scholar