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Characterization of W/Si multilayers by ultrasoft x-ray emission spectroscopy

Published online by Cambridge University Press:  03 March 2011

E.Z. Kurmaev ,
S.N. Shamin ,
V.R. Galakhov ,
G. Wiech ,
E. Majkova  and
S. Luby
E.Z. Kurmaev
Affiliation:
Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170, Russia
S.N. Shamin
Affiliation:
Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170, Russia
V.R. Galakhov
Affiliation:
Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170, Russia
G. Wiech
Affiliation:
Sektion Physik, Ludwig-Maximillians-Universität München, 80539 Müinchen 22, Germany
E. Majkova
Affiliation:
Institute of Physics, Slovak Academy of Sciences, 842 28 Bratislava, Slovak Republic
S. Luby
Affiliation:
Institute of Physics, Slovak Academy of Sciences, 842 28 Bratislava, Slovak Republic
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Abstract

The SiL2.3 emission spectra of amorphous W/Si multilayers were measured. For the as-deposited samples the SiL2,3 emission spectra have been found to be very close to that of amorphous Si. The formation of WSi2 phase during annealing of W/Si multilayers at a temperature ≥50 °C was detected. From the SiL2,3 emission spectra of as-deposited and annealed samples, the amount of W/Si2 phase was estimated. It is shown that this technique can be used for quantitative estimation of the ratio of amorphous Si and WSi2 phases in W/Si multilayers.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 4 , April 1995 , pp. 907 - 911
Copyright
Copyright © Materials Research Society 1995

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References

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