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Characterization of surface microroughness of silicon wafers by a multipass Fabry–Perot Rayleigh–Brillouin scattering spectrometer

Published online by Cambridge University Press:  31 January 2011

Lu Taijing ,
S. C. Ng ,
J. Furukawa  and
H. Furuya
Lu Taijing
Affiliation:
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119280, Singapore
S. C. Ng
Affiliation:
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119280, Singapore
J. Furukawa
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1–297, Kitabukuro-Cho, Omiya, Saitama 330, Japan
H. Furuya
Affiliation:
Central Research Institute, Mitsubishi Materials Corporation, 1–297, Kitabukuro-Cho, Omiya, Saitama 330, Japan
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Abstract

Surface microroughness of various Si(100) wafers was detected and characterized by a 180° backscattering Rayleigh–Brillouin scattering spectrometer (RBSS), and measured by an atomic force microscopy (AFM). The intensity of the scattered light from the wafers is found to increase with increasing surface microroughness which was measured by AFM. By scanning across the wafer, the inhomogeneous distribution of surface microroughness is detected and characterized. The system can be easily developed into a mapping technique. The results of the surface microroughness detected by AFM and RBSS suggest that they are complementary for the characterization of the surface microroughness from a microarea to a whole wafer.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 4 , April 1996 , pp. 878 - 883
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Stover, J. C., Optical Scattering, Measurement and Analysis (McGraw-Hill, New York, 1990).Google Scholar
2.Bennett, H. and Mattson, L., Introduction to Surface Roughness and Scattering (Optical Society of America, Washington, DC, 1989).Google Scholar
3.Church, E. L., Jenkinson, H. A., and Zavada, J. M., Opt. Eng. 18, 125 (1979).CrossRefGoogle Scholar
4.Elson, J. M., Rahn, J. P., and Bennett, J. M., Appl. Opt. 22, 3207 (1983).CrossRefGoogle Scholar
5.Taijing, Lu, Toyoda, K., Nango, N., and Ogawa, T., J. Cryst. Growth 108, 482 (1991).CrossRefGoogle Scholar
6.Taijing, Lu, Toyoda, K., Nango, N., and Ogawa, T., J. Cryst. Growth 114, 64 (1991).Google Scholar
7. Proc. STEP/Microroughness '92, Tokyo, Japan, May 25, 1992.Google Scholar
8.Rifkin, J., Klicker, K. A., Bjork, D. R., Cheever, D. R., Schiff, T. F., Stover, J. C., Cady, F. M., Wilson, D. J., Chausse, P. D., and Kirchner, K. H., Proc. SPIE, 1036 (1988).Google Scholar
9.Modern Analysis of Scattering Phenomena, edited by Maystre, D. and Dainty, J. C., Proc. Int. Workshop held at Domaine De Tournon, Aixen Province, France, September 5–8, 1990 (1991).Google Scholar
10.Ng, S. C. and Taijing, Lu, J. Cryst. Growth 131, 265 (1993).CrossRefGoogle Scholar
11.Taijing, Lu and Ng, S. C., J. Mater. Res. 9, 2712 (1994).CrossRefGoogle Scholar
12.Harley, R. T., J. Phys. E: Sci. Instrum. 12, 255 (1975).CrossRefGoogle Scholar
13.Teh, H. C., Ng, S. C., Hosea, T. J. C., and Rajaratnam, A., J. Singapore National Academy of Science 13, 75 (1984).Google Scholar
14.Ng, S. C., Chan, T. F., and Teh, H. C., J. Microcomp. Appl. 15, 137 (1992).CrossRefGoogle Scholar
15.Binnig, G., Quate, C. F., and Gerber, Ch., Phys. Rev. Lett. 59, 55 (1986).Google Scholar
16.Scanning Tunneling Microscopy, edited by Neddermeyer, H. (Kluwer Academic Publishers, Dordrecht, Boston, London, 1993).CrossRefGoogle Scholar
17.Gross, K. P. and Stokowski, S. E., Measurement of Haze with Surface Particle Monitors, Technology Seminar, 1 Nov. 1991, Tencor Instrument, USA.Google Scholar