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Change of the critical thickness in the preferred orientation of TiN films

Published online by Cambridge University Press:  03 March 2011

U.C. Oh ,
Jung Ho Je  and
Jeong Y. Lee
U.C. Oh
Affiliation:
Department of Mechanical Engineering, Yanbian University of Science & Technology, Beisan Street, Yanji City, Jilin Province, 133000 China
Jung Ho Je
Affiliation:
Department of Materials Science & Engineering, Pohang University of Science & Technology, P.O. Box 125 Pohang, Kyungbook 790-330, South Korea
Jeong Y. Lee
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-Dong, Yousung-Ku, Taejeon 305-701, South Korea
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Abstract

Recently it was observed through cross-sectional TEM that the preferred orientation of the TiN thin film was changed from (200) to (111) with thickness. In this study, the process of the change in the preferred orientation was studied near the critical thickness by x-ray diffraction, and the value of the critical thickness could be estimated. The change of the critical thickness was also investigated with the strain energy per unit volume. The strain energy could be changed by controlling the energy of the bombarding particle, i.e., by adjusting the rf power, the working pressure, and the substrate bias in sputtering. The critical thickness was decreased monotonically in all cases as the energy of the bombarding particle or the strain energy per unit volume was increased. These results surely show the dependence of the change of the preferred orientation on the strain energy in the TiN thin films.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 3 , March 1995 , pp. 634 - 639
Copyright
Copyright © Materials Research Society 1995

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References

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