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Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering

Published online by Cambridge University Press:  31 January 2011

Kun Ho Ahn ,
Sunggi Baik  and
Sang Sub Kim
Kun Ho Ahn
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790–784, Korea
Sunggi Baik
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790–784, Korea
Sang Sub Kim
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Kwangju 500–757, Korea
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Abstract

A drastic change of the growth orientation in epitaxial Pt films grown by sputtering on MgO(001) was observed. At higher substrate temperatures, practically pure (001) epitaxial Pt films grow. On the other hand, epitaxial (111) Pt films grow at lower substrate temperatures. Interestingly, the gradual transition from (111) to (001) orientation occurs at lower temperatures when applied at a lower deposition rate. The degree of supersaturation in growth conditions is proposed as a key driver of the orientation change. When homogeneous nucleation occurs under a higher supersaturation, a large number of nuclei grow at the flat (001) terraces possessing (111) tetrahedral orientation. Under a lower supersaturation, a small number of nuclei aligned in (001) orientation to each other form dominantly at surface defects, resulting in a (001) epitaxial film with no grains. Our results suggest that one can selectively prepare either (001) or (111) epitaxial Pt films by properly adjusting substrate temperature and/or deposition rate.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 9 , September 2002 , pp. 2334 - 2338
Copyright
Copyright © Materials Research Society 2002

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References

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