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Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures

Published online by Cambridge University Press:  31 January 2011

M. Godlewski ,
E. M. Goldys ,
M. R. Phillips ,
R. Langer  and
A. Barski
M. Godlewski
Affiliation:
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Al. Lotników 32/46, Poland
E. M. Goldys
Affiliation:
Semicond. Sci. & Technol. Lab., Macquarie University, North Ryde, 2109 NSW, Australia
M. R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Australia
R. Langer
Affiliation:
CEA-Grenoble, DRFMC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
A. Barski
Affiliation:
CEA-Grenoble, DRFMC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
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Abstract

In this paper we evaluate the in-depth homogeneity of GaN epilayers and the influence of electric field present in strained GaN/AlGaN heterostructures and quantum wells on the yellow and “edge” emission in GaN and AlGaN. Our depth-profiling cathodoluminescence measurements show an increased accumulation of defects at the interface. Inhomogeneities in the doping level are reflected by the enhancement of the yellow emission in the interface region. The piezoelectric effect is found to strongly reduce the emission from the strained AlGaN quantum-well barriers. We also show that Ga droplets, commonly found on surfaces of samples grown in Ga-rich conditions, screen the internal electric field in a structure and thus result in a local enhancement of the edge emission intensity.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 2 , February 2000 , pp. 495 - 501
Copyright
Copyright © Materials Research Society 2000

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References

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