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Carbothermal synthesis of TaC whiskers via a vapor-liquid-solid growth mechanism

Published online by Cambridge University Press:  31 January 2011

M. Johnsson
Affiliation:
Department of Inorganic Chemistry, Arrhenius Laboratory, Stockholm University, S-106 91 Stockholm, Sweden
M. Nygren
Affiliation:
Department of Inorganic Chemistry, Arrhenius Laboratory, Stockholm University, S-106 91 Stockholm, Sweden
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Abstract

Tantalum carbide whiskers have been synthesized via a vapor-liquid-solid (VLS) growth mechanism in the temperature region 1200–1300 °C in nitrogen or argon. The starting materials consisted of Ta2O5, C, Ni, and NaCl. Carbon was added to reduce tantalum pentoxide, via a carbothermal reduction process, and Ni was used to catalyze the whisker growth. Thermodynamic calculations showed that tantalum is transported in the vapor phase as an oxochloride rather than as a chloride. An alkali metal chloride such as NaCl can be used as a source of Cl. The formation of TaC whiskers was found to be strongly dependent on the processing conditions used, on the choice of precursor materials, e.g., their particle sizes, and on the mixing procedure. So far we have obtained TaC whisker in a yield of 75–90 vol %. These whiskers are 0.1–0.6 μm in diameter and 10–30 μm in length, and they are straight and exhibit smooth surfaces. The main impurities are TaC particles, minor amounts of unreacted carbon, and remnants of the Ni catalyst.

Type
Articles
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Ahlén, N., Johnsson, M., and Nygren, M., J. Am. Ceram. Soc. 79, 28032808 (1996).CrossRefGoogle Scholar
2.Nixdorf, R. D. and Rawlins, M. H., Patent, U.S. No. 4,888,084 (1989).Google Scholar
3.Kida, T. (Tokai), Patent, U.S. No. 5,256,243 (1991).Google Scholar
4.Coyle, T., Ekelund, M., Nygren, M., and Johnsson, M., Swedish patent application No. 9504626-4, December 1995.Google Scholar
5.Nygren, M., Johnsson, M., Ahlén, N., and Ekelund, M., Swedish patent application No. 9504625-6, December 1995.Google Scholar
6.Johnsson, M., Ahlén, N., Nygren, M., Ekelund, M., and Brandt, G., Swedish patent application No. 9601335-4, April 1996.Google Scholar
7.Johansson, K. E., Palm, T., and Werner, P. E., J. Phys. Sci. Instrum. 13, 12891291 (1980).CrossRefGoogle Scholar
8.Werner, P. E., Arkiv för kemi. 31, 513516 (1969).Google Scholar
9.Roine, A., “HSC Chemistry for windows 2.0,” Outokumpo research Oy, Pori, Finland (1994).Google Scholar
10.Tamari, N. and Kato, A., J. Less-Comm. Metals 58, 147160 (1978).CrossRefGoogle Scholar
11.Givargizov, E. I., in Current Topics in Materials Science, edited by E., Kaldis (North-Holland, Amsterdam, 1978), Vol. 1.Google Scholar
12.Gaballah, I., Allain, E., and Djona, M., Light Metals, edited by U., Mannweiler (The Minerals, Metals & Materials Society, Warrendale, PA, 1994), pp. 11531161.Google Scholar