Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-20T07:23:51.705Z Has data issue: false hasContentIssue false

Ba0.7Sr0.3TiO3 ferroelectric film prepared with the sol-gel process and its dielectric performance in planar capacitor structure

Published online by Cambridge University Press:  31 January 2011

Fan Wang
Affiliation:
Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland
Antti Uusimäki
Affiliation:
Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland
Seppo Leppävuori
Affiliation:
Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland
S. F. Karmanenko
Affiliation:
St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia
A. I. Dedyk
Affiliation:
St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia
V. I. Sakharov
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia
I. T. Serenkov
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia
Get access

Abstract

Ferroelectric Ba0.7Sr0.3TiO3 thin films were successfully deposited on sapphire (r-cut) substrates by the sol-gel process, and the deposited films were annealed at various temperatures and for various soaking times. The compositional and structural characteristics of the films were systematically examined with the aid of x-ray diffraction, scanning electron microscopy, and medium energy ion scattering techniques. Their dependence on thermal processes was investigated. A planar capacitor structure based on the BSTO films was fabricated to evaluate the electrical and dielectric performance. These results, together with the microstructure characteristics, were analyzed and an optimal process was finally established.

Type
Articles
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Parker, L. H. and Trash, Al. F., Jr., IEEE Circuits and Devices Mag. 1, 17 (1990).Google Scholar
2.Trash, Al. F., Jr. and Parker, L. H., Proc. IEEE 77, 374 (1989).Google Scholar
3.Babbitt, R. W., Koscica, T. E., and Drach, W. C., Microwave J. 35, 63 (1992).Google Scholar
4.Sengupta, L. C., Ngo, E., Stowell, S., Lancto, R., Drach, W. C., Koscica, T. E., and Babbitt, R. W., Ferroelectrics 153, 359 (1994).CrossRefGoogle Scholar
5.Yamamichi, S., Yabuta, H., Sakuma, T., and Milyasaka, Y., Appl. Phys. Lett. 64, 1644 (1994).CrossRefGoogle Scholar
6.Carroll, K. R., Pond, J. M., Chresey, D. B., Horwitz, J. S., Leuchtner, R. E., and Grabowski, K. S., Appl. Phys. Lett. 62, 1845 (1993).Google Scholar
7.Knauss, L. A., Pond, J. M., Horwitz, J. S., Chrisey, D. B., Mueller, C. H., and Treece, R., Appl. Phys. Lett. 69, 25 (1996).CrossRefGoogle Scholar
8.Lee, W. J., Kim, H. G., and Yoon, S. G., J. Appl. Phys. 80, 5891 (1996).CrossRefGoogle Scholar
9.Hütten, D.. Güunther, U., Meyer, O., Reiner, J., and Linker, G., Appl. Phys. Lett. 65, 2863 (1994).Google Scholar
10.Meyer, O., Weschenfelder, F., Xi, X. X., Xiong, G. C., Linker, G., and Geerk, J., Nucl. Instrum. Methods B35, 292 (1988).CrossRefGoogle Scholar
11.Handbook of Chemistry and Physics, 75th ed. (CRC Press Inc., Boca Raton, FL, 1994), pp. 4, 67.Google Scholar
12.Kamalasanan, M. N., Kumar, N. D., and Chandra, S., Appl. Phys. 76, 4603 (1994).CrossRefGoogle Scholar
13.Wechsler, B. A. and Kirby, K. W., J. Am. Ceram. Soc. 75, 981 (1992).CrossRefGoogle Scholar
14.Vendik, O. G., Ter-martirosyan, L. T., Dedyk, A. I., Karmanenko, S. F., and Chakalov, R. A., Ferroelectrics 144, 33 (1993).Google Scholar
15.Karmanenko, S. F., private communication (1996).Google Scholar
16.Abe, K. and Komatsu, S., J. Appl. Phys. 77, 6461 (1995).CrossRefGoogle Scholar
17.Arlt, G., Hennings, D., and de With, G., J. Appl. Phys. 58, 1619 (1985).CrossRefGoogle Scholar
18.Hwang, C. S., Park, S. O., Cho, H-J., Kang, C. S., Kang, H-K., Lee, S. I., Lee, M. Y., Appl. Phys. Lett. 67, 2819 (1997).CrossRefGoogle Scholar
19.Izuha, M., Abe, K., Koike, M., Takeno, S., and Fukushima, N., Appl. Phys. Lett. 70, 1405 (1997).Google Scholar