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Atom-probe field ion microscope analysis of surfaces of materials

Published online by Cambridge University Press:  31 January 2011

Tien T. Tsong ,
Chong-lin Chen  and
Jiang Liu
Tien T. Tsong
Affiliation:
Physics Department, The Pennsylvania State University, University Park, Pennsylvania 16802
Chong-lin Chen
Affiliation:
Physics Department, The Pennsylvania State University, University Park, Pennsylvania 16802
Jiang Liu
Affiliation:
Physics Department, The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

Our recent applications of the atom-probe field ion microscope to the study of physics and chemistry of materials at the atomic level are summarized. The materials applicability of field ion microscopy has recently been extended to silicon, silicide, graphite, high Tc superconductors, and other materials. Atom-probe field ion microscopy has been used for atomic layer by atomic layer chemical analysis of surfaces in alloy and impurity segregations, for analyzing the compositional changes across metal-semiconductor interfaces, and for studying formation of cluster ions in laser stimulated field desorption. The energetics of atoms in solids and on surfaces can be studied by a direct kinetic energy analysis of field desorbed ions using a high resolution pulsed-laser time-of-flight atom-probe and by other field ion microscope measurements. The site specific binding energy of surface atoms can be measured at low temperature, where the atomic structure of the surface is still perfectly defined, to an accuracy of about 0.1 to 0.3 eV.

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 4 , Issue 6 , December 1989 , pp. 1549 - 1559
Copyright
Copyright © Materials Research Society 1989

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References

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