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The annealing behavior of sputter-deposited Al–Mn and Al–Mn–Si films

Published online by Cambridge University Press:  31 January 2011

M. J. Kaufman ,
F. S. Biancaniello  and
K. G. Kreider
M. J. Kaufman
Affiliation:
Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98105
F. S. Biancaniello
Affiliation:
Institute for Materials Science and Engineering, National Bureau of Standards, U.S. Department of Commerce, Gaithersburg, Maryland 20899
K. G. Kreider
Affiliation:
Center for Chemical Engineering, National Bureau of Standards, U.S. Department of Commerce, Gaithersburg, Maryland 20899
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Abstract

The annealing behavior of amorphous and icosahedral Al–17Mn and Al–20Mn–4Si films, prepared by sputter deposition, have been studied. Both hot stage transmission electron microscopy of thin (20–200 nm) films and furnace annealing plus x-ray diffration of thicker (1–10μm) films were utilized to study the various transformations resulting from elevated temperature exposures. The results are presented and correlated with the reactions anticipated from the phase diagrams and the results reported in previous studies.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1342 - 1348
Copyright
Copyright © Materials Research Society 1988

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References

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