Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-20T06:23:10.577Z Has data issue: false hasContentIssue false
  • English
  • Français

The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

Published online by Cambridge University Press:  31 January 2011

X.D. Zhang ,
X.J. Meng ,
J.L. Sun ,
T. Lin ,
J.H. Ma ,
J.H. Chu ,
N. Wang  and
Joonghoe Dho
X.D. Zhang*
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; and Department of Physics, Kyungpook National University, Daegu 702-701, Korea
X.J. Meng
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
J.L. Sun
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
T. Lin
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
J.H. Ma
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
J.H. Chu*
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; and Laboratory for Polar Materials and Devices, East China Normal University, Shanghai 200062, People’s Republic of China
N. Wang
Affiliation:
Department of Physics and Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
Joonghoe Dho
Affiliation:
Department of Physics, Kyungpook National University, Daegu 702-701, Korea
*
a) Address all correspondence to these authors. e-mail: [email protected]
b) Address all correspondence to these authors. e-mail: [email protected]
Get access

Abstract

The Pb(ZrxTi1–x)O3(PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

Keywords

Crystal growthFerroelectricityPhase transformation
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 11 , November 2008 , pp. 2846 - 2853
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Scott, J.F., Araujo, C.A.: Ferroelectric memories. Science 246, 1400 1989CrossRefGoogle ScholarPubMed
2Ramesh, R.: Thin Film Ferroelectric Materials and Devices Kluwer Boston 1997CrossRefGoogle Scholar
3Muralt, P., Kholkin, A., Kohli, M., Maeder, T.: Piezoelectric actuation of PZT thin-film diaphragms at static and resonant conditions. Sens. Actuators, A 53, 398 1996CrossRefGoogle Scholar
4Lee, S.H., Jeon, M.S., Hong, K.I., Lee, J.W., Kim, C.K., Choi, D.K.: Cantilever type lead zirconate titanate microactuator utilizing ruthenium oxide. Jpn. J. Appl. Phys., Part 1 39, 2859 2000CrossRefGoogle Scholar
5Cho, C.R., Francis, L.F., Jang, M.S.: Piezoelectric properties and acoustic wave detection of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical system sensor. Jpn. J. Appl. Phys., Part 2 38, L751 1999CrossRefGoogle Scholar
6Gardeniers, J.G.E., Verholen, A.G.B.J., Tas, N.R., Elwenspoek, M.: Direct measurement of piezoelectric properties of sol-gel PZT films. J. Korean Phys. Soc. 32, S1573 1998Google Scholar
7Kanno, I., Fujii, S., Kamada, T., Takayama, R.: Piezoelectric characteristics of c-axis oriented Pb(Zr, Ti)O3 thin films. J. Korean Phys. Soc. 32, S1481 1998Google Scholar
8Yamamoto, M., Kanno, I., Aoki, S.: Profile measurement of high aspect ratio micro-structures using a tungsten carbide micro-cantilever coated with PZT thin films in Proceedings of the IEEE International Conference on Micro Electro Mech. Syst. (MEMS 2000), Miyazaki, Japan,2000 217Google Scholar
9Brueck, S.R.J., Myers, R.A.: Applications of nonlinear optical thin films in Epitaxial Oxide Thin Films and Heterostructures, edited by D.K. Fork, J.M. Phillips, R. Ramesh, and R.M. Wolf (Mater. Res. Soc. Symp. Proc. 341, Pittsburgh, PA, 1994), p. 243CrossRefGoogle Scholar
10Newnham, R.E., Ruschau, G.R.: Smart electroceramics. J. Am. Ceram. Soc. 74, 463 1991CrossRefGoogle Scholar
11Xiao, D.Q., Zhu, J.G., Qian, Z.H.: Ferroelectric integrated thin films. Ferroelectrics 151, 27 1994CrossRefGoogle Scholar
12Van Hoof, C., Baert, K., Witvrouw, A.: The best materials for tiny, clever sensors. Science 306, 986 2004CrossRefGoogle ScholarPubMed
13Song, Y.J., Zhu, Y.F., Desu, S.B.: Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1–xTix)O3 thin films. Appl. Phys. Lett. 72, 2686 1998CrossRefGoogle Scholar
14Meng, X.J., Cheng, J.G., Li, B., Guo, S.L., Ye, H.J., Chu, J.H.: Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique. J. Cryst. Growth 208, 541 2000CrossRefGoogle Scholar
15Pan, H-C., Chou, C-C., Tsai, H-L.: Low-temperature processing of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing. Appl. Phys. Lett. 83, 3156 2003CrossRefGoogle Scholar
16Wang, Z.J., Kokawa, H., Takizawa, H., Ichiki, M., Maeda, R.: Low-temperature growth of high-quality lead zirconate titanate thin films by 28 GHz microwave irradiation. Appl. Phys. Lett. 86, 212903 2005CrossRefGoogle Scholar
17Lourdes Calzada, M., Bretos, I., Jiménez, R., Guillon, H., Pardo, L.: Low-temperature processing of ferrolelectric thin films compatible with silicon integrated circuit technology. Adv. Mater. 16(18), 1620 2004CrossRefGoogle Scholar
18Ye, F., Lu, K.: Crystallization kinetics of amorphous solids under pressure. Phys. Rev. B 60(10), 7018 1999CrossRefGoogle Scholar
19Gunton, J.D.: Homogeneous nucleation. J. Stat. Phys. 95(5/6), 903 1999CrossRefGoogle Scholar
20Calzada, M.L., Bretos, I., Jiménez, R., Guillon, H., Ricote, J., Pardo, L.: Low-temperature ultraviolet sol-gel photoannealing processing of multifunctional lead-titanate-based thin films. J. Mater. Res. 22(7), 1824 2007CrossRefGoogle Scholar
21Bretos, I., Jimenez, R., Rodriguez-Castellon, E., Garcia-Lopez, J., Calzada, M.L.: Heterostructure and compositional depth profile of low-temperature processed lead titanate-based ferroelectric thin films prepared by photochemical solution deposition. Chem. Mater. 20(4), 1443 2008CrossRefGoogle Scholar
22Zhang, X.D., Meng, X.J., Sun, J.L., Lin, T., Chu, J.H.: Investigation of room temperature electrical resistivities of LaNiO3–δthin films deposited by rf magnetron sputtering and high oxygen-pressure processing. J. Vac. Sci. Technol., A 24(4), 914 2006CrossRefGoogle Scholar
23Zhang, X.D., Meng, X.J., Sun, J.L., Lin, T., Chu, J.H., Kwon, D.Y., Kim, C.W., Kim, B.G.: Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing. Thin Solid Films 516, 919 2008CrossRefGoogle Scholar
24Floquet, N., Hector, J., Gaucher, P.: Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate. J. Appl. Phys. 84, 3815 1998CrossRefGoogle Scholar
25Iota, V., Yoo, C.S., Cynn, H.: Quartzlike carbon dioxide: An optically nonlinear extended solid at high pressures and temperatures. Science 283, 1510 1999CrossRefGoogle ScholarPubMed
26Yamauchi, H., Karppinen, M.: Application of high-pressure techniques: Stabilization and oxidation-state control of novel superconductive and related multi-layered copper oxides. Supercond. Sci. Technol. 13, R33 2000CrossRefGoogle Scholar
27Karpinski, J., Meijer, G.I., Schwer, H., Molinski, R., Kopnin, E., Conder, K., Angst, M., Jun, J., Kazakov, S., Wisniewski, A., Puzniak, R., Hofer, J., Alyoshin, V., Sin, A.: High-pressure synthesis, crystal growth, phase diagrams, structural and magnetic properties of Y2Ba4CunO2n +x, HgBa2Can −1CunO2n +2+δ and quasi-one-dimensional cuprates. Supercond. Sci. Technol. 12, R153 1999CrossRefGoogle Scholar
28Davis, R.F.: Diamond Films and Coatings: Development, Properties, and Applications William Andrew Inc. 1993Google Scholar
29Guthrie, M., Tulk, C.A., Benmore, C.J., Xu, J., Yarger, J.L., Klug, D.D., Tse, J.S., Mao, H-K., Hemley, R.J.: Formation and structure of a dense octahedral glass. Phys. Rev. Lett. 93, 115502 2004CrossRefGoogle ScholarPubMed
30Rouquette, J., Haines, J., Bornand, V., Pintard, M., Papet, Ph., Astier, R., Léger, J.M., Gorelli, F.: Transition to a cubic phase with symmetry-breaking disorder in PbZr0.52Ti0.48O3 at high pressure. Phys. Rev. B 65, 214102 2002CrossRefGoogle Scholar
31Escote, M.T., Pontes, F.M., Leite, E.R., Longo, E., Jardim, R.F., Pizani, P.S.: High oxygen-pressure annealing effects on the ferroelectric and structural properties of PbZr0.3Ti0.7O3 thin films. J. Appl. Phys. 96, 2186 2004CrossRefGoogle Scholar
32Lu, C-H., Hwang, W-J., Sun, Y-C.: Ferroelectric lead zirconate titanate thin films synthesized via a high-pressure crystallization process. Jpn. J. Appl. Phys. 41, 6674 2002CrossRefGoogle Scholar
33Zhang, X.D., Meng, X.J., Sun, J.L., Lin, T., Chu, J.H.: Low-temperature preparation of highly (100)-oriented Pb(ZrxTi1–x)O3 thin film by high oxygen-pressure processing. Appl. Phys. Lett. 86, 252902 2005CrossRefGoogle Scholar
34You, D.J., Jung, W.W., Choi, S.K., Cho, Y.: Domain structure in a micron-sized PbZr1–xTixO3 single crystal on a Ti substrate fabricated by hydrothermal synthesis. Appl. Phys. Lett. 84(17), 3346 2004CrossRefGoogle Scholar
35Aggarwal, S., Perusse, S.R., Tipton, C.W., Ramesh, R., Drew, H.D., Venkatesan, T., Romero, D.B., Podobedov, V.B., Weber, A.: Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors. Appl. Phys. Lett. 73(14), 1973 1998CrossRefGoogle Scholar