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Adhesion of Cu and low-k Dielectric Thin Films with Tungsten Carbide

Published online by Cambridge University Press:  31 January 2011

A. M. Lemonds ,
K. Kershen ,
J. Bennett ,
K. Pfeifer ,
Y-M. Sun ,
J. M. White  and
J. G. Ekerdt
A. M. Lemonds
Affiliation:
International Sematech, 2706 Montopolis Drive, Austin, Texas 78714
K. Kershen
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
J. Bennett
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
K. Pfeifer
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
Y-M. Sun
Affiliation:
Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712
J. M. White
Affiliation:
Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712
J. G. Ekerdt*
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The adhesion of copper and various dielectric materials to tungsten carbide was studied using interfacial critical debond energies obtained by the four-point flexure method. Tungsten carbide (W2C), films 33.3 nm thick, were vapor deposited onto SiO2, spin-on carbon polymer resin (CPR), chemically vapor deposited organosilicate glass (OSG), and spin-on siloxane-organic polymer (SOP) surfaces using direct-current magnetron sputtering of a W metal target and a methane substrate plasma. Thick copper films (42.5 nm) were vapor deposited onto W2C. Some interfaces were modified by an Ar plasma, 1-nm W deposition, or O2 plasma treatment prior to Cu deposition. A W2C film deposited onto a CPR substrate was annealed for 2 h at 673 K in a 99% N2/1% H2gas mixture. For the untreated dielectric surfaces, the debond energy ranged from 39.9 to 3.95 J/m2. In order of descending adhesion energy, the substrates are ranked CPR, SiO2, SOP, and OSG. Ar plasma treatment of the SiO2 surface increased the debond energy from 20.3 to 41.3 J/m2. The Cu/W2C debond energy was 20.4 J/m2. Ar plasma or 1-nm W deposition treatment to the carbide surface moved the point of delamination from the Cu/W2C interface to the W2C/CPR interface for a Cu/W2C/CPR multilayer structure.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1320 - 1328
Copyright
Copyright © Materials Research Society 2002

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References

1.Ohring, M., The Materials Science of Thin Films (Academic Press, San Diego, CA, 1992), pp. 439–446.Google Scholar
2.Hutchinson, J.W. and Suo, Z., in Advances in Applied Mechanics, edited by Hutchinson, J.W. and Wu, T.Y. (Academic Press, New York, 1991), pp. 63–191.Google Scholar
3.Charlambides, P.G., Lund, J., Evans, A.G., and McMeeking, R.M., J. Appl. Mech. 56, 77 (1989).Google Scholar
4.Evans, A.G., Ru¨hle, M., Dalgleish, B.J., and Charlambides, P.G., Mater. Sci. Eng. A 126, 53 (1990).CrossRefGoogle Scholar
5.Evans, A.G., Drory, M.D., and Hu, M.S., J. Mater. Res . 3, 1043 (1988).CrossRefGoogle Scholar
6.Dauskardt, R.H., Lane, M., Ma, Q., and Krishna, N., Eng. Fract. Mech. 61, 141 (1998).CrossRefGoogle Scholar
7.Lane, M., Vainchtein, A., Gao, H., and Dauskardt, R.H., J. Mater Res. 15, 2758 (2000).Google Scholar
8.Charlambides, P.G., Cao, H.C., Lund, J., and Evans, A.C., Mech. Mater. 8, 269 (1990).CrossRefGoogle Scholar
9.Moulder, J.F., Stickle, W.F., Sobol, P.E., and Bomben, K.D., in Handbook of X-ray Photoelectron Spectroscopy, edited by Chastain, J. and King, J.R.C. (Physical Electronics, Eden Prairie, MN, 1995).Google Scholar
10.Sun, Y-M., Lee, S.Y., Lemonds, A.M., Engbrecht, E.R., Veldman, S., Lozano, J., White, J.M., Ekerdt, J.G., Emesh, I., and Pfeifer, K., Thin Solid Films 397, 109 (2001).Google Scholar
11.Wang, S., Tsai, H.Y., and Sun, S.C., Thin Solid Films 394, 180 (2001).CrossRefGoogle Scholar
12.Whitman, C., Moslehi, M.M., Paranjpe, A., Velo, L., and Omstead, T., J. Vac. Sci. Technol. A 17, 1893 (1999).CrossRefGoogle Scholar
13.Plummer, J.D., Deal, M.D., and Griffin, P.B., Silicon VLSI Technology Fundamentals, Practice and Modeling (Prentice Hall, Upper Saddle River, NJ, 2000).Google Scholar
14.Lieberman, M.A. and Lichtenberg, A.J., Principles of Plasma Discharges and Materials Processing (John Wiley & Sons, New York, 1994).Google Scholar
15.Ono, H., Nakano, T., and Ohta, T., Appl. Phys. Lett. 64, 1511 (1994).Google Scholar
16.Veldman, S., Lemonds, A.M., Kershen, K., Sun, Y-M., Emesh, I., Pfeifer, K., White, J.M., and Ekerdt, J.G., in Advanced Metallization Conference 2000 (AMC 2000), edited by Edelstein, D., Dixit, G., Yasuda, Y., and Ohba, T., (Materials Research Society, Warrendale, PA, 2000), pp. 307–312.Google Scholar
17.Israelachvili, J., Intermolecular and Surface Forces, 2nd ed. (Academic Press, San Diego, CA, 1992), pp. 112–146.Google Scholar
18.Askeland, D.R., The Science and Engineering of Materials (PWS, Boston, MA, 1994), p. 797.Google Scholar
19.Shaffer, P.T.B., in Carbide, Nitride, and Boride Materials Synthesis and Processing, edited by Weimer, A.W. (Chapman and Hall, London, United Kingdom, 1997), p. 643.Google Scholar
20.Lee, S., Kim, D.J., Yang, S.H., Park, J., Sohn, S., Oh, K., Kim, Y.T., Kim, J.Y., Yeom, G.Y., and Park, J.W., J. Appl. Phys. 85, 473 (1999).CrossRefGoogle Scholar