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Addition of TiO2 on the electrical properties of buried resistors in low-temperature cofired ceramics

Published online by Cambridge University Press:  31 January 2011

Ching-Tai Cheng ,
Jiang-Tsair Lin  and
Ying-Chang Hung
Ching-Tai Cheng*
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, Republic of China
Jiang-Tsair Lin
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, Republic of China
Ying-Chang Hung
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, Republic of China
*
a) e-mail: [email protected]
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Abstract

Effects of TiO2 addition on the conduction mechanism of buried resistors in low temperature cofired ceramics were investigated. Remarkable increases in electrical resistivity and attractive decreases in the temperature coefficient of resistance were observed by the addition of TiO2 for all ratios of RuO2/glass investigated. Such significant effects can be attributed to a larger separation observed between RuO2 particles. The results were compared with the calculated data from theoretical model of tunneling barrier, showing that good agreement could be obtained. In addition, while the distance separation was taken into account as a fixed constant, it was found that the resistivity of buried resistor decreased with increasing TiO2 contents in the glass at higher weight ratios of TiO2/glass. This result implies that a substitution takes place due to the Si+4 displacement by Ti+4 in the glass, resulting in a looser network structure and a lower resistivity value.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 9 , September 2003 , pp. 2235 - 2242
Copyright
Copyright © Materials Research Society 2003

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References

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