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Absorption coefficient of β–SiC grown by chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Attaullah Solangi  and
M.I. Chaudhry
Attaullah Solangi
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13699
M.I. Chaudhry
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, New York 13699
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Abstract

The absorption coefficient of β–SiC is measured by the transmission technique. β–SiC films are grown on Si substrates by chemical vapor deposition using a buffer layer between β–SiC and the substrate. The absorption coefficient value ranges from 10 to 5.5 × 104 cm−1 in the energy range between 2.42 and 4.4 eV. The bandgap of β–SiC films investigated in this study ranges between 2.13 and 2.32 eV.

Type
Communications
Information
Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 539 - 541
Copyright
Copyright © Materials Research Society 1992

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References

1.Blakers, A. W. and Green, M. A., Appl. Phys. Lett. 47, 818 (1985).Google Scholar
2.Rohatgi, A. and Choudhury, P. R., IEEE Trans. Elect. Dev. ED-31, 596 (1984).Google Scholar
3.Sugii, T., Ito, T., Furumura, Y., Doki, M., Mieno, F., and Maeda, M., IEEE Trans. Elect. Dev. Lett. 9, 87 (1988).Google Scholar
4.Sugii, T., Yamakazi, T., and Ito, T., IEEE Trans. Elect. Dev. ED-37, 2331 (1990).Google Scholar
5.Chaudhry, M.I., McCluskey, R.J., and Wright, R.L., J. Cryst. Growth 113, 120 (1991).Google Scholar
6.Addamino, A. and Sprague, J. S., Appl. Phys. Lett. 44, 525 (1984).CrossRefGoogle Scholar
7.David, M., Babu, S.V., Chaudhry, M.I., and Flint, B.K., Appl. Phys. Lett. 57, 1093 (1990).Google Scholar
8.Chaudhry, M. I. and Wright, R. L., J. Mater. Res. 5, 1595 (1990).Google Scholar
9.Pankove, J. I., Optical Processes in Semiconductors (Prentice Hall, Englewood Cliffs, NJ, 1971), p. 103.Google Scholar
10.Pankove, J. I. and Aigrain, P., Phys. Rev. 126 956 (1962).CrossRefGoogle Scholar
11.Patrick, L. and Choyke, W. J., Phys. Rev. 186, 775 (1969).Google Scholar
12.Nishino, S., Matsunami, H., and Tanaka, T.Jpn. J. Appl. Phys. 14, 1833 (1975).Google Scholar
13.Palmour, J. W., Kong, H. S., and Davis, R. F., Appl. Phys. Lett. 51, 2028 (1987).Google Scholar