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Wideband high-efficiency linearized PA design with reduction in memory effects and IMD3

Published online by Cambridge University Press:  12 April 2018

Xuekun Du ,
Chang Jiang You ,
Yulong Zhao ,
Xiang Li ,
Mohamed Helaoui ,
Jingye Cai  and
Fadhel M. Ghannouchi
Xuekun Du*
Affiliation:
University of Electronic Science and Technology of China, 611731 ChengduChina Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Chang Jiang You
Affiliation:
University of Electronic Science and Technology of China, 611731 ChengduChina
Yulong Zhao
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Xiang Li
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Mohamed Helaoui
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
Jingye Cai
Affiliation:
University of Electronic Science and Technology of China, 611731 ChengduChina
Fadhel M. Ghannouchi*
Affiliation:
Intelligent RF Radio Laboratory, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB T2N 1N4, Canada
*
Author for correspondence: Xuekun Du, E-mail: [email protected] and Fadhel M. Ghannouchi, E-mail: [email protected]
Author for correspondence: Xuekun Du, E-mail: [email protected] and Fadhel M. Ghannouchi, E-mail: [email protected]
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Abstract

An analytical method is proposed to reduce the memory effects and third-order intermodulation distortions for improving the linearity of wideband power amplifier (PA). An excellent linearity can be obtained by reducing the second-harmonic output power levels and reducing the envelope voltage components in the megahertz range. An improved wideband Chebyshev low-pass matching network including the bias network is analyzed and designed to validate the proposed method. The measured results indicate that a wideband high-efficiency linearized PA is realized from 1.35 to 2.45 GHz (fractional bandwidth = 58%) with power added efficiency of 60–78%, power gain of 10.8–12.3 dB, and output power of 40.0–41.2 dBm. For a 20 MHz LTE modulated signal, the adjacent channel leakage ratios (ACLRs) of the proposed PA with digital pre-distortion (DPD) linearization are −55.7 ~ −53.9 dBc across 1.5–2.4 GHz at an average output power of 32.4–33.6 dBm. For a 40 MHz two-carrier LTE modulated signal, the ACLRs of the proposed PA with DPD linearization are −51.1 ~ −48.2 dBc at an average output power of ~30.5 dBm in the frequency range from 1.5 GHz to 2.4 GHz.

Keywords

Active circuitspower amplifiers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 10 , Issue 4 , May 2018 , pp. 391 - 400
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2018 

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