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A wideband CMOS distributed amplifier with slow-wave shielded transmission lines

Published online by Cambridge University Press:  15 November 2010

Rosa R. Lahiji ,
Linda P.B. Katehi  and
Saeed Mohammadi
Rosa R. Lahiji*
Affiliation:
Department of Electrical Engineering & Computer Science, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA. Phone: +1 216 368 4120. West Wireless Health Institute, 10350 North Torrey Pines Road, La Jolla, CA 92037, USA.
Linda P.B. Katehi
Affiliation:
University of California at Davis, One Shields Avenue, Davis, CA 95616, USA.
Saeed Mohammadi
Affiliation:
Purdue University, Birck Nanotechnology Center, 1205 West State Street, West Lafayette, IN 47907, USA.
*
Corresponding author: R.R. Lahiji Email: [email protected]
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Abstract

A four-stage distributed amplifier utilizing low-loss slow-wave shielded (SWS) transmission lines is implemented in a standard 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology. The amplifier when biased in its high current operating mode of IDtotal = 46 mA (at Vdd = 2.2 V, Pdiss = 101 mW) provides a forward transmission gain of 11.3 ± 1.5 dB with a 3-dB bandwidth of 17 GHz and a gain-bandwidth product of 74 GHz. The noise figure (NF) under the same bias condition is better than 8.5 dB up to 10 GHz. The measured output-referred 1-dB compression point is higher than +2 dBm. The amplifier is also measured under low-bias condition of IDtotal = 18 mA (at Vdd = 1.15 V, Pdiss = 20.7 mW). It provides a transmission gain of 6.6 ± 1 dB, a 3-dB bandwidth of 14.8 GHz, a gain-bandwidth product of 35.5 GHz, and a NF of better than 8.6 dB up to 10 GHz. Despite using a simple four-stage cascode design, this distributed amplifier achieves very high-gain-bandwidth product at a relatively low DC power compared to the state of the art CMOS distributed amplifiers reported in the literature. This is due to the incorporation of low-loss SWS coplanar waveguide (CPW) transmission lines with a loss factor of nearly 50% of that of standard transmission lines on CMOS-grade Si substrate.

Keywords

CMOS integrated circuitsdistributed amplifiershielded transmission linesslow-wave coplanar waveguides
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Issue 1 , February 2011 , pp. 59 - 66
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Schneider, K.; Driad, R.; Makon, R.E.; Weimann, G.: Distributed amplifier MMIC with 21 dB gain and 90 GHz bandwidth using InP-based DHBTs, in IEEE Symp. on Compound Semiconductor Integrated Circuit, Portland, OR, USA, 2007.CrossRefGoogle Scholar
[2]Deng, K.; Huang, T.; Wang, H.: Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages. IEEE Trans. Microw. Theory Tech., 51 (2003), 2188–2196.CrossRefGoogle Scholar
[3]Mohammadi, S.; Park, J.-W.; Pavlidis, D.; Guyaux, J.L.; Garcia, J.C.: Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication. IEEE Trans. Microw. Theory Tech., 48 (2000), 1038–1044.CrossRefGoogle Scholar
[4]Lee, G.; Ko, H.; De Flaviis, F.: Advanced design of broadband distributed amplifier using a SiGe BiCMOS technology, in IEEE MTT-S Int. Microwave Symp., Philadelphia, PA, USA, 2003.Google Scholar
[5]Aguirre, J.; Plett, C.: 50-GHz SiGe HBT distributed amplifiers employing constant-k and m-derived filter sections. IEEE Trans. Microw. Theory Tech., 52 (2004), 1573–1579.CrossRefGoogle Scholar
[6]Guan, X.; Nguyen, C.: Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems. IEEE Trans. Microw. Theory Tech., 54 (2006), 3278–3283.CrossRefGoogle Scholar
[7]Aguirre, J.; Plett, C.; Schvan, P.: A 2.4Vp-p output, 0.045–32.5 GHz CMOS distributed amplifier, in IEEE Radio Frequency Integrated Circuits Symp., Honolulu, HI, 2007.Google Scholar
[8]Arbabian, A.; Niknejad, A.M.: A broadband distributed amplifier with internal feedback providing 660 GHz GBW in 90 nm CMOS, in IEEE Int. Solid-State Circuits Conf., San Francisco, CA, USA, 2008.CrossRefGoogle Scholar
[9]Chien, J.-C.; Chen, T.-Y.; Lu, L.-H.: A 9.5-dB 50-GHz matrix distributed amplifier in 0.18 µm CMOS, in IEEE Symp. on VLSI Circuits, Homolulu, HI, 2006.Google Scholar
[10]Heydari, B.; Bohsali, M.; Adabi, E.; Niknejad, A.M.: Millimeter-wave devices and circuit blocks up to 104 GHz in 90 nm CMOS. IEEE J. Solid-State Circuits, 42 (2007), 2893–2903.Google Scholar
[11]Chen, T.; Chien, J.; Lu, L.: A 45.6-GHz matrix distributed amplifier in 0.18-nm CMOS, in IEEE Proc. on Custom Integrated Circuits Conference, San Jose, CA, USA, 2005.Google Scholar
[12]Cheung, T.S.D.; Long, J.R.: Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits. IEEE J. Solid-State Circuits, 41 (2006), 1183–1200.CrossRefGoogle Scholar
[13]Doan, C.H.; Emami, S.; Niknejad, A.M.; Brodersen, R.W.: Millimeter-wave CMOS design. IEEE J. Solid-State Circuits, 40 (2005), 144–155.CrossRefGoogle Scholar
[14]Ma, Y.; Rejaei, B.; Zhuang, Y.: Low-loss on-chip transmission lines with micro-patterned artificial dielectric shields. IEEE Electron. Lett., 44 (2008), 913–914.CrossRefGoogle Scholar
[15]Ayasli, Y.; Mozzi, R.L.; Vorhaus, J.L.; Reynolds, L.D.; Pucel, R.A.: A monolithic GaAs 1–13-GHz traveling-wave amplifier. IEEE Trans. Electron Devices, 29 (1982), 1072–1077.CrossRefGoogle Scholar
[16]Heydari, B. et al. : A 60-GHz 90-nm CMOS cascode amplifier with interstage matching, in IEEE European Microwave Integrated Circuits Conf., Munich, Germany, 2007.CrossRefGoogle Scholar
[17]Amaya, R.E.; Tarr, N.G.; Plett, C.: A 27 GHz fully integrated CMOS distributed amplifier using coplanar waveguides, in IEEE Symp. on Radio Frequency Integrated Circuits, Fort Worth, TX, USA, 2004.Google Scholar
[18]Lu, L.H.; Chen, T.Y.; Lin, Y.J.: A 32-GHz non-uniform distributed amplifier in 0.18 µm CMOS. IEEE Microw. Wirel. Compon. Lett., 15 (2005), 745–747.Google Scholar
[19]Moez, K.; Elmasry, M.: A 10 dB 44 GHz loss-compensated CMOS distributed amplifier, in IEEE Int. Solid-State Circuits Conf., San Francisco, CA, USA, 2007.CrossRefGoogle Scholar
[20]Arbabian, A.; Niknejad, A.M.: A tapered cascaded multi-stage distributed amplifier with 370 GHz GBW in 90 nm CMOS, in IEEE Radio Frequency Integrated Circuits Symp., Atlanta, GA, USA, 2008.CrossRefGoogle Scholar
[21]Yang, S.; Seo, K.: A compact and wideband GaAs P-HEMT distributed amplifier IC based on a micro-machined CPW, in IEEE MTT-S Int. Microwave Symp., Boston, MA, USA, 2000.Google Scholar
[22]Strid, E.W.; Gleason, K.R.: A DC-12 GHz monolithic GaAs FET distributed amplifier. IEEE Trans. Microwave Theory and Techniques, 30 (1982), 969–975.CrossRefGoogle Scholar