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A subharmonic front-end in SiGe:C technology for 94-GHz imaging arrays

Published online by Cambridge University Press:  22 June 2009

Erik Öjefors ,
Johannes Borngräber ,
Falk Korndörfer  and
Ullrich Pfeiffer
Erik Öjefors*
Affiliation:
Institute of High-Frequency and Communication Technology, University of Wuppertal, Rainer-Gruenter-Str. 21, D-42119 Wuppertal, Germany.
Johannes Borngräber
Affiliation:
IHP Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
Falk Korndörfer
Affiliation:
IHP Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
Ullrich Pfeiffer
Affiliation:
Institute of High-Frequency and Communication Technology, University of Wuppertal, Rainer-Gruenter-Str. 21, D-42119 Wuppertal, Germany.
*
Corresponding author: E. Öjefors Email: [email protected]
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Abstract

The design of a subharmonic downconverter for 94-GHz imaging arrays in SiGe:C technology is presented. A three-stage differential low-noise amplifier (LNA) with lumped matching networks is used together with a subharmonic mixer driven by a single-pole local-oscillator poly-phase network to form the front-end. The LNA yields 15 dB gain at 94 GHz, while the mixer provides 5 dB conversion gain over a 10 GHz IF bandwidth. The integrated downconverter provides 20 dB conversion gain at 94 GHz with an input 1-dB compression point of −31 dBm and has a current consumption of 45 mA at a 3.3 V supply voltage. The total required die area of the complete downconverter (excluding pad frame) is 0.1 mm, thus making it particularly suitable as a front-end in multi-channel receiver systems.

Keywords

Millimeter wave integrated circuitsDownconverterSilicon germaniumSubharmonic mixerLow-noise amplifier
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 361 - 368
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

REFERENCES

[1]Babakhani, A.; Guan, X.; Komijani, A.; Natarajan, A.; Hajimiri, A.: A 77-GHz phased array transceiver with on-chip antennas in silicon: Receiver and antennas. IEEE J. Solid-State Circuits, 41 (2006), 2795–2806, doi: 10.1109/JSSC.2006.884811.CrossRefGoogle Scholar
[2]Chevalier, P. et al. : 300 GHz self-aligned SiGeC HBT optimized towards CMOS compatiblity, in Proc. Bipolar/BiCMOS Circuits and Technology Meeting, 2005, pp. 120–123, doi: 10.1109/BIPOL.2005.1555214.CrossRefGoogle Scholar
[3]Öjefors, E.; Sönmez, E.; Chartier, S.; Schick, C.; Rydberg, A.; Schumacher, H.: Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology. IEEE Trans. Microwave Theory Tech., 55 (2005), 1467–1475, doi: 10.1109/TMTT.2007.900315.CrossRefGoogle Scholar
[4]Chartier, S.; Schleicher, B.; Korndorfer, F.; Glisic, S.; Fischer, G.; Schumacher, H.: A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS technology, in European Microwave Integrated Circuit Conf. (EuMIC) 2007, pp. 407–410, doi: 10.1109/EMICC.2007.4412735.CrossRefGoogle Scholar
[5]Laskin, E.; Chevalier, P.; Chantre, A.; Sautreuil, B.; Voinigescu, S.P.: 80/160-GHz transceiver and 140-GHz amplifier in SiGe technology, in 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symp., 2007, pp. 153–156, doi: 10.1109/RFIC.2007.380854.CrossRefGoogle Scholar
[6]Müller, A.; Thiel, M.; Irion, H.; Ruoss, H.-O.: A 122 GHz SiGe active subharmonic mixer, in European Gallium Arsenide and Other Semiconductor Application Symp., 2005 (EGAAS 2005), 2005, pp. 57–60.Google Scholar
[7]Svitek, R.; Raman, S.: A SiGe active sub-harmonic front-end for 5–6 GHz direct-conversion receiver applications, in 2003 IEEE MTT-S Int. Microwave Symp. Digest, 2003, pp. 675–678.Google Scholar
[8]Lindberg, P.; Öjefors, E.; Sönmez, E.; Rydberg, A.: A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ demodulator, in 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers, 2004, pp. 247–250, doi: 10.1109/SMIC.2004.1398214.CrossRefGoogle Scholar
[9]Parsa, A.; Razavi, B.: A 60 GHz CMOS receiver using a 30 GHz LO, in IEEE Int. Solid-State Circuits Conf., 2008 (ISSCC 2008), Digest of Technical Papers, 2008, pp. 190–191, doi: 10.1109/ISSCC.2008.4523121.CrossRefGoogle Scholar
[10]Öjefors, E.; Pfeiffer, U.R.: A 94-GHz monolithic front-end for imaging arrays in SiGe:C technology. in European Microwave Integrated Circuit Conf., 2008 (EuMIC 2008), 2008, pp. 422–425, doi: 10.1109/EMICC.2008.4772319.CrossRefGoogle Scholar
[11]Heinemann, B. et al. : Novel collector design for high-speed SiGe:C HBTs, in International Electron Devices Meeting, 2002 (IEDM '02) Digest, 2002, pp. 775–778, doi: 10.1109/IEDM.2002.1175953.CrossRefGoogle Scholar
[12]Sönmez, E.; Chartier, S.; Trasser, A.; Schumacher, H.: Isolation issues in multifunctional Si/SiGe ICs at 24 GHz, in 2005 IEEE MTT-S Int. Microwave Symp. Digest, 2005, pp. 169–172, doi: 10.1109/MWSYM.2005.1516550.CrossRefGoogle Scholar
[13]Koh, K.-J.; Rebeiz, G.M.: 0.13-um CMOS phase shifters for X-, Ku-, and K-band phased arrays. IEEE J. Solid-State Circuits, 42 (2007), 2535–2546, doi: 10.1109/JSSC.2007.907225.CrossRefGoogle Scholar
[14]Gordon, M.; Yao, T.; Voinigescu, S.P.: 65-GHz receiver in SiGe BiCMOS using monolithic inductors and transformers, in 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers, 2006, pp. 265–268, doi: 10.1109/SMIC.2005.1587965.CrossRefGoogle Scholar
[15]Mikkelsen, J.H.; Jensen, O.K.; Larsen, T.: Measurement and modeling of coupling effects of CMOS on-chip coplanar inductors, in 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers, 2004, pp. 37–40, doi: 10.1109/SMIC.2004.1398161.CrossRefGoogle Scholar
[16]Goren, D. et al. : An interconnect-aware methodology for analog and mixed signal design, based on high bandwidth (over 40 GHz) on-chip transmission line approach, in Proc. 2002 Design, Automation and Test in Europe Conf. and Exhibition (DATE’02), 2002.Google Scholar
[17]Zwick, T.; Tretiakov, Y.; Goren, D.: On-chip SiGe transmission line measurements and model verification up to 110 GHz. IEEE Microwave Wireless Compon. Lett., 15 (2005), 65–67, doi: 10.1109/LMWC.2004.842817.CrossRefGoogle Scholar