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Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation

Published online by Cambridge University Press:  10 April 2015

Nick G.M. Tao ,
Bo-Rong Lin ,
Chien-Ping Lee ,
Tim Henderson  and
Barry J.F. Lin
Nick G.M. Tao*
Affiliation:
Qorvo, Inc. (Former TriQuint Semiconductor), Hillsboro, OR 97124, USA. Phone: + 01 503 615 9083
Bo-Rong Lin
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan
Chien-Ping Lee
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan Qorvo, Inc. (Former TriQuint Semiconductor), San Jose, CA 95134, USA
Tim Henderson
Affiliation:
Qorvo, Inc. (Former TriQuint Semiconductor), Hillsboro, OR 97124, USA. Phone: + 01 503 615 9083
Barry J.F. Lin
Affiliation:
Qorvo, Inc. (Former TriQuint Semiconductor), San Jose, CA 95134, USA
*
Corresponding author: N.G.M. Tao Email: [email protected]
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Abstract

The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied using two-dimensional Technology Computer-Aided Design (TCAD) tool. Comprehensive physical models, including hydrodynamic transport-based impact ionization and self-heating models were implemented. The simulations for two DC modes (constant Ib and Vb modes) captured all the SOA features observed in measurements and some failure mechanisms were revealed for the first time by TCAD simulations. The simulated results are also in agreement with analytical modeling. The simulation not only gives us insight to the detailed failure mechanisms, but also provides guidance for the design of devices with better ruggedness and improved SOA performances.

Keywords

SimulationHBTSafe operating areaTCAD
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 7 , Special Issue 3-4: European Microwave Week 2014 , June 2015 , pp. 279 - 285
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

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