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SiGe heterojunction bipolar phototransistor for optics–microwaves interfacing

Published online by Cambridge University Press:  27 October 2011

Pierre Lecoy ,
Bruno Delacressonniere  and
Daniel Pasquet
Pierre Lecoy
Affiliation:
ETIS (Equipe Traitement de l'information et des systèmes), ENSEA, Université de Cergy Pontoise, CNRS UMR8051, 6 avenue du Ponceau, F-95014 Cergy Pontoise Cedex, France.
Bruno Delacressonniere*
Affiliation:
ENSEA, 6 avenue du Ponceau, F-95014 Cergy Pontoise Cedex, France. LaMIPS (Laboratoire de Microélectronique et de Physique des Semiconducteurs), CRISMAT-NXP Semiconductors-PRESTO engineering, CNRS UMR 6508, 6 boulevard Maréchal Juin, F-14000Caen, France. Phone: + 33130736275.
Daniel Pasquet
Affiliation:
LaMIPS (Laboratoire de Microélectronique et de Physique des Semiconducteurs), CRISMAT-NXP Semiconductors-PRESTO engineering, CNRS UMR 6508, 6 boulevard Maréchal Juin, F-14000Caen, France. Phone: + 33130736275.
*
Corresponding author: B. Delacressonniere Email: [email protected]
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Abstract

A new SiGe heterojunction bipolar phototransistor (HPT) based on a commercially available process was designed, realized, and experimentally characterized. Its internal characteristics, mainly the collector-to-base capacitance, vary significantly with the received light power, making it suitable as an active element of a light-controlled photo-oscillator. It can also be a key component of optical network-on-chip (ONoC). Its responsivity was improved and its transition frequency remains in the range of 30 GHz.

Keywords

PhotodetectionPhototransistorRadio over fiberOptical Networks on ChipSiGe
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Issue 6 , December 2011 , pp. 633 - 636
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

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