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A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

Published online by Cambridge University Press:  23 January 2013

Aritra Acharyya ,
Suranjana Banerjee  and
J. P. Banerjee
Aritra Acharyya*
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721
Suranjana Banerjee
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721 Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly 712121, West Bengal, India
J. P. Banerjee
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721 Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly 712121, West Bengal, India
*
Corresponding author: A. Acharyya Email: [email protected]
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Abstract

A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz Silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities. A novel method is proposed in this paper to determine the parasitic series resistance of a millimeter-wave IMPATT device from large-signal electric field snapshots at different phase angles of a full cycle of steady-state oscillation. The method is based on the depletion width modulation of the device under a large-signal condition. The series resistance of the device is also obtained from the large-signal admittance characteristics at threshold frequency. The values of series resistance of a 35 GHz SDR IMPATT diode obtained from the proposed method and the large-signal admittance method are compared with experimentally reported values. The results show that the proposed method provides better and closer agreement with the experimental value.

Keywords

Large-signal simulationSeries resistanceElectric field snapshotsDepletion width modulationMillimeter-wave IMPATTs
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 1: Special Issue on the German RoCC Project , February 2013 , pp. 91 - 100
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

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