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Non-linear electrical modeling of MASMOS structure to design power amplifiers for 4G applications

Published online by Cambridge University Press:  15 February 2018

Frédérique Simbélie ,
Sylvain Laurent ,
Pierre Medrel ,
Michel Prigent ,
Myrianne Regis ,
Yann Creveuil  and
Raymond Quéré
Frédérique Simbélie*
Affiliation:
XLIM Laboratory C2SNL, 16 rue Jules Vallès, 19100 Brive-la-Gaillarde, France
Sylvain Laurent
Affiliation:
XLIM Laboratory C2SNL, 16 rue Jules Vallès, 19100 Brive-la-Gaillarde, France
Pierre Medrel
Affiliation:
XLIM Laboratory C2SNL, 16 rue Jules Vallès, 19100 Brive-la-Gaillarde, France
Michel Prigent
Affiliation:
XLIM Laboratory C2SNL, 16 rue Jules Vallès, 19100 Brive-la-Gaillarde, France
Myrianne Regis
Affiliation:
ACCO semiconductor, 36-38 rue de la princesse, 78430 Louveciennes, France
Yann Creveuil
Affiliation:
ACCO semiconductor, 36-38 rue de la princesse, 78430 Louveciennes, France
Raymond Quéré
Affiliation:
XLIM Laboratory C2SNL, 16 rue Jules Vallès, 19100 Brive-la-Gaillarde, France
*
Author for correspondence: F. Simbélie, E-mail: [email protected]
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Abstract

This paper presents the characterization and modeling process of MASMOS structures by means of a classical compact three-port electrical non-linear model approach. From DC and S-parameters measurements, a large signal model (LSM) has been developed for two different MASMOS structures. The proposed LSM and associated modeling approach have been validated through load pull measurements with different harmonic load conditions. Then, generic multi-tone measurements have been carried out making use of an innovative test bench to quantify linearity performances of MASMOS structures. The model is used in a power amplifiers design flow for LTE applications and is expected to allow a significant reduction of simulation time, compared with technological-oriented model as BSIM3.

Keywords

Load pulllow-frequency measurementMASMOSmodeling methodsmulti-tones signalparameter extractiontransistors
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 10 , Special Issue 1: Journee Nationale des Micro-ondes 2017 , February 2018 , pp. 9 - 17
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2018 

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References

1.ACCO Semiconductor (2011) Electronic circuits including a MOSFET and a dual-gate JFET. Patent 7969243.Google Scholar
2.Simbélie, F, Laurent, S, Medrel, P, Prigent, M, Quere, R, Regis, M and Creveuil, Y (2016) Characterization and nonlinear modeling of MASMOS transistor in order to design power amplifiers for LTE applications. In 29th Symposium on Integrated Circuits and Systems Design (SBCCI).Google Scholar
3.Jardel, O, Callet, G, Charbonniaud, C, Jacquet, J, Sarazin, N, Morvan, E, Aubry, R, Poisson, M-ADF, Teyssier, J-P, Piotrowicz, S and Quéré, R (2009) A new nonlinear HEMT model for AlGaN/GaN switch applications. In Proceedings of the 4th European Microwave Integrated Circuits Conference, 28–29 September 2009.Google Scholar
4.Dambrine, G, Cappy, A and Heliodore, F (1988). A new method for determining the FET small-signal equivalent circuit. IEEE Transactions on Microwave Theory and Technique 36(7), 1151.Google Scholar
5.Forestier, S, Gasseling, T, Bouysse, P, Quéré, R and Nebus, JM (2004) A new nonlinear capacitance model of millimeter wave power PHEMT for accurate AM/AM-AM/PM simulations. IEEE Microwave and Wireless Components Letters 14(1), 43–45.Google Scholar
6.Ogboi, F, Tasker, P, Akmal, M, Lees, J, Benedikt, J, Bensmida, S, Morris, K, Beach, M and McGeehan, J (2013). A LSNA configured to perform baseband engineering for device linearity investigations under modulated excitations. In Microwave Conference (EuMC), 2013 European, 6–10 Oct 2013, pp. 684–687.Google Scholar
7.Colantino, P, Giannini, F, Limiti, E and Teppati, V (2004). An approach to harmonic load and source pull measurements for high efficiency PA design. IEEE Transactions on Microwave Theory and Techniques 52(1), 191–198.Google Scholar
8.Jose Carlos, P and Nuno Borges, C (1999). On the use of multitoned techniques for assessing RF components intermodulation distorsion. IEEE Transactions on M.T.T 47(12), 2393–2402.Google Scholar
9.Hajji, R, Beauregard, F and Ghannouchi, FM (1997). Multitone power and intermodulation load pull characterization of microwave transistor suitable for linear SSPA's design. IEEE Transactions on M.T.T 45(7), 1093–1099.Google Scholar
10.Westcott, RJ (1967). Investigation of multiple f.m./f.d.m. carriers through a satellite t.w.t. operating near to saturation. Proceedings of the IEEE 114(6), 726–740.Google Scholar
11.Teyssier, J, Sombrin, J, Quéré, R, Laurent, S and Gizard, F (2014). A test set up for the analysis of multi-tone intermodulation in microwave devices. In ARFTG, 84th ARFTG, Dec 2014.Google Scholar
12.Sombrin, J (2011). On the Formal identity of EVM and NPR measurement methods: conditions for identity of error vector magnitude and noise power ratio. In Proceedings of the 41st European Microwave Conference, Manchester, 2011.Google Scholar