Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-23T11:48:55.501Z Has data issue: false hasContentIssue false
  • English
  • Français

Noise properties of balanced amplifier configurations

Published online by Cambridge University Press:  10 February 2011

E.E.M. Woestenburg
E.E.M. Woestenburg*
Affiliation:
ASTRON, The Netherlands Institute for Radio Astronomy, P.O. Box 2, 7990 AA Dwingeloo, The Netherlands. Phone:  + 31 521595100.
*
Corresponding author: E.E.M. Woestenburg Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper analyzes the noise properties of balanced amplifier configurations in terms of noise waves and discusses the effect of various amplifier configurations on the noise and signal parameters. It shows how the noise generated in the load on the input coupler of a balanced amplifier deteriorates the amplifiers noise resistance parameter with respect to that of its component amplifiers. The properties of two new balanced amplifier configurations will be discussed, which enable the reduction or elimination of this deterioration.

Keywords

Balanced amplifierMicrowave amplifierLow noise amplifierNoise parametersNoise waves
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Issue 1 , February 2011 , pp. 67 - 75
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Engelbrecht, R.S.; Kurokawa, K.: A wideband low noise L-band balanced transistor amplifier. Proc. IEEE, 53 (1965), 237–247.Google Scholar
[2]Kurakowa, K.: Design theory of balanced transistor amplifiers. Bell System Technical Journal, 44 (1965), 1675–1698.CrossRefGoogle Scholar
[3]Padin, S.; Ortiz, G.G.: A cooled 1–2 GHz balanced HEMT Amplifier. IEEE Trans. Microw. Theory Tech. 39 (1991), 1239–1243.Google Scholar
[4]Woestenburg, E.E.M.: LNAs for the multi frequency front ends. ASTRON Internal Technical Report, NFRA-ITR 219, 1997.Google Scholar
[5]Woestenburg, E.E.M.: OMMIC CGY2105/06XHV, Advance Datasheets, 2008.Google Scholar
[6]www.skatelescope.orgGoogle Scholar
[7]van Cappellen, W.; Bakker, L.; Oosterloo, T.: Experimental results of a 112 element phased array feed for the Westerbork synthesis radio telescope, in IEEE Int. Symp. on Antennas and Propagation, 2009, 1–4.CrossRefGoogle Scholar
[8]Ruiter, M.; van der Wal, E.: EMBRACE, a 10000 element next generation aperture array telescope, in Proc. of the European Microwave Conf., 2009, 326–329.CrossRefGoogle Scholar
[9]Belostotski, L.; Haslett, J.W.: Sub-0.2 dB noise figure wideband room-temperature CMOS LNA with non-50 Ω signal-source impedance. IEEE J. Solid-State Circuits, 42 (2007), 2492–2502.CrossRefGoogle Scholar
[10]Bij de Vaate, J.G.; Bakker, L.; Woestenburg, E.E.M.; Witvers, R.H.; Kant, G.W.; van Cappellen, W.: Low cost low noise phased-array feeding systems for SKA pathfinders, in 13th Int. Symp. on Antenna Technology and Applied Electromagnetics and the Canadian Science Meeting 2009, ANTEM/URSI 2009, Banff, Canada, 2009.CrossRefGoogle Scholar
[11]Witvers, R.H.; Bij de Vaate, J.G.; Woestenburg, E.E.M.: Sub 0.15 dB noise figure room temperature GaAs LNA for next generation radio telescope, in Proc. of the European Microwave Conf., Paris, 2010, 1078–1081.Google Scholar
[12]Maaskant, R.; Woestenburg, E.E.M.: Applying the active impedance to achieve noise match in receiving array antennas, in IEEE Int. Symp. on Antennas and Propagation, Hawaii, 2007.CrossRefGoogle Scholar
[13]Warnick, K.F.; Woestenburg, E.E.M.; Belostotski, L.; Russer, P.: Minimizing the noise penalty due to mutual coupling for a receiving array. IEEE Trans. Antennas Propag., 57 (2009), 1634–1644.Google Scholar
[14]Kerr, A.R.: On the noise properties of balanced amplifiers. IEEE Microw. Guid. Wave Lett., 8 (1998), 390–392.CrossRefGoogle Scholar
[15]Meys, R.P.: A wave approach to the noise properties of linear microwave devices. IEEE Trans. Microw. Theory Tech., 26 (1978), 34–37.Google Scholar
[16]Wedge, S.W.; Rutledge, D.B.: Wave Techniques for Noise Modeling and Measurement. IEEE Trans. Microw. Theory Tech., 40 (1992), 2004–2012CrossRefGoogle Scholar
[17]Lange, J.: Noise Characterization of Linear Twoports in Terms of Invariant Parameters. IEEE J. Solid-State Circuits, 2 (1967), 37–40.CrossRefGoogle Scholar
[18]Pospieszalski, M.W.: Modeling of noise parameters of MESFET's and MOSFET's and their frequency and temperature dependence. IEEE Trans. Microw. Theory Tech. 37 (1989), 1340–1350.CrossRefGoogle Scholar
[19]Pospieszalski, M.W.: On Certain Properties of Field-Effect and Bipolar Transistors, in Proc. of the 2006 MIKON Conference 1127–1130, Krakow (2006).Google Scholar
Supplementary material: File

Woestenburg Supplementary Material

Woestenburg Supplementary Biography

Download Woestenburg Supplementary Material(File)
File 556 KB
Supplementary material: File

Woestenburg Supplementary Material

Woestenburg Supplementary List of Figures

Download Woestenburg Supplementary Material(File)
File 20.5 KB