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A new nonlinear HEMT model for AlGaN/GaN switch applications

Published online by Cambridge University Press:  07 July 2010

Guillaume Callet ,
Jad Faraj ,
Olivier Jardel ,
Christophe Charbonniaud ,
Jean-Claude Jacquet ,
Tibault Reveyrand ,
Erwan Morvan ,
Stéphane Piotrowicz ,
Jean-Pierre Teyssier  and
R. Quéré
Guillaume Callet*
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France. Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Jad Faraj
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
Olivier Jardel
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Christophe Charbonniaud
Affiliation:
AMCAD Engineering, ESTER Technopole, 87069 Limoges, France.
Jean-Claude Jacquet
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Tibault Reveyrand
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
Erwan Morvan
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
Stéphane Piotrowicz
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
Jean-Pierre Teyssier
Affiliation:
XLIM-UMR CNRS 6172-Université de Limoges, 7, rue Jules Vallès, 19100 Brive-la-Gaillarde, France.
R. Quéré
Affiliation:
Alcatel-Thales 3-5lab, Route de Nozay, 91640 Marcoussis, France.
*
Corresponding author: G. Callet Email: [email protected]
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Abstract

We present here a new set of equations for modeling the I–V characteristics of Field Effects Transistors (FETs), particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model enables to decrease the modeling process duration when a same transistor topology is used for several applications in a T/R module. It can even be used for switches design, which is the most demanding application in terms of I–V swing. Moreover, particular care was taken to accurately model the first third orders of the current derivatives, which is important for multione applications. We also focused on an accurate definition of the nonlinear elements such as capacitances for power applications. There are 18 parameters for the main current source (and six for both diodes Igs and Igd). This can be compared to Tajima's equations-based model (13 parameters) or to the Angelov model (14 parameters), which only fit the I–V characteristics for positive values of Vds. We will detail here the model formulation, and show some measurements/modeling comparisons on both I–V, [S]-parameters and temporal load-pull obtained for a 8 × 75 μm GaN HEMT, with 0.25 μm gate length.

Keywords

SwitchSPSTSPDTGaNModel
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Special Issue 3-4: European Microwave Week 2009 , August 2010 , pp. 283 - 291
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Teyssier, J.-P.; Viaud, J.-P.; Quéré, R.: A new non-linear I(V) model for FET devices including breakdown effects. IEEE Microw. Guid. Wave Lett., 4 (4) (1994), 104–106.CrossRefGoogle Scholar
[2]Angelov, I.; Zirath, H.; and Rorsman, N.: A new empirical model for HEMT and MESFET devices. IEEE Trans. Microw. Theory Tech., 40 (12) (1992), 2258–2266.CrossRefGoogle Scholar
[3]Curtice, W.R.; Ettemberg, M.: A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers. IEEE Trans. Microw. Theory Tech., 12 (1985), 1381–1394.Google Scholar
[4]Islam, S.S.; Anwar, A.F.M.: Spice model of AlGaN/GaN hemts and simulation of VCO and power amplifier. Int. J. High Speed Electron. Syst., 14 (2004) 853–859.CrossRefGoogle Scholar
[5]Nemati, H.M.; Ferndhal, M.; Angelov, I.; Fager, C.; Zirath, H.: Design of high efficiency KA-band harmonically tuned power amplifiers, in Radio and Wireless Symp., 2009, RWS'09, IEEE, 2009.CrossRefGoogle Scholar
[6]Maas, S.; Neilson, D.: Modeling of MESFET's for intermodulation analysis of mixers and amplifiers, in IEEE MTT-S Microwave Symp. Dig., 1990, 1291–1294.Google Scholar
[7]Teyssier, J.; Bouysse, P.; Ouarch, Z.; Peyretaillade, T.; Quere, R.: 40 GHz/150 ns versatile pulsed measurement system for microwave transistor isothermal characterization. IEEE Microw. Theory Tech., 46 (12) (1998), 2043–2052.CrossRefGoogle Scholar
[8]Baylis, C.; Dunleavy, L.; Connick, R.: Modeling considerations for GaN HEMT devices, in Wireless and Microwave Technology Conf., Clearwater, FL 2009, 1–2.CrossRefGoogle Scholar
[9]Jardel, O. et al. : An electrothermal model for AlGaN/GaN power hemts including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microw. Theory Tech., 55 (12) (2007), 2660–2669.CrossRefGoogle Scholar
[10]Bahl, S.; Alamo, J.D.: A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs. IEEE Trans. Electron Devices, 40 (8) (1993), 1558–1560.CrossRefGoogle Scholar
[11]Jardel, O. et al. : A new nonlinear HEMT model for AlGaN/GaN switch applications in Proc. European Microwave Integrated Circuits Conf. EuMIC 2009, 2009, 73–76.Google Scholar
[12]De Groote, F.; Verspecht, J.; Tsironis, C.; Barataud, D.; Teyssier, J.-P.: An improved coupling method for time domain load-pull measurements, in Proc. 65th ARFTG Conf. Digest Spring 2005, June 17, 2005, 4pp.CrossRefGoogle Scholar
[13]Faraj, J.; Callet, G.; De Groote, F.; Verspecht, J.; Quere, R.; Teyssier, J.-P.: Bursts of pulses for time domain large signal measurements, in Microwave Measurement Conf. 73rd ARFTG, Boston, MA 2009, 1–4.CrossRefGoogle Scholar