Hostname: page-component-669899f699-b58lm Total loading time: 0 Render date: 2025-04-26T22:45:00.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Lithographical bending control method for a piezoelectric actuator

Published online by Cambridge University Press:  06 March 2009

Tamio Ikehashi ,
Etsuji Ogawa ,
Hiroaki Yamazaki  and
Tatsuya Ohguro
Tamio Ikehashi*
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
Etsuji Ogawa
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
Hiroaki Yamazaki
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
Tatsuya Ohguro
Affiliation:
Toshiba Corporation, Semiconductor Company, Center for Semiconductor R&D Yokohama, Japan.
*
Corresponding author: T. Ikehashi E-mail: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents the theoretical formulation of a lithographical bending control (LBC) method that uses lithographical degrees of freedom to control the bending of a multilayered beam. LBC is applied to a piezoelectric actuator that uses PZT as the piezoelectric material. The theoretical model is compared with measurements using a weakly fixed bridge structure suited for curvature measurement.

Keywords

MEMSPiezoelectric actuatorPZTBendingLBC
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 1 , February 2009 , pp. 37 - 42
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1]Lee, H.-C.; Park, J.-H.; Park, Y.-H.: Development of shunt type ohmic RF MEMS switches actuated by piezoelectric cantilever. Sensors Actuators A, 136 (2007), 282–290.CrossRefGoogle Scholar
[2]Kawakubo, T.; Nagano, T.; Nishigaki, M.; Itaya, K.: High reproducibility and reliability of piezoelectric MEMS tunable capacitors for reconfigurable RF front-end. IEDM Dig., (2007), 435–438.Google Scholar
[3]Klaasse, G.; Puers, B.; Tilmans, H.A.C.: Piezoelectric actuation for application in RF-MEMS switches. Proc. SPIE, 5455 (2004), 174–180.CrossRefGoogle Scholar
[4]Ikehashi, T.; Ohguro, T.; Ogawa, E.; Yamazaki, H.; Kojima, K.; Matsuo, M.; Ishimaru, K.; Ishiuchi, H.: A robust RF MEMS variable capacitor with piezoelectric and electrostatic actuation. 2006 IEEE MTT-S Int. Microwave Symp. Dig., (2006), 39–42.CrossRefGoogle Scholar
[5]Ikehashi, T.; Ogawa, E.; Yamazaki, H.; Ohguro, T.: A 3V operation RF-MEMS variable capacitor using piezoelectric and electrostatic actuation with lithographical bending control, 2007 Transducers Dig., (2007), 400–403Google Scholar
[6]Smits, J.G.; Choi, W.-S.: The constituent equations of piezoelectric heterogeneous bimorphs. IEEE Trans. Ultrasonics, Ferroelectrics Freq. Control, 38, (1991), 256–270CrossRefGoogle ScholarPubMed
[7]DeVoe, D.L.; Pisano, A.P.: Modeling and optimal design of piezoelectric cantilevermicroactuators. J. Microelectromech. Sys., 6, (1997), 266–270CrossRefGoogle Scholar
[8]Tilmans, H.A.C.: Micro-mechanical Sensors Using Encapsulated Built-in Resonant Strain Gauges. PhD thesis, University of Twente, 1993.Google Scholar
[9]Weinberg, M.S.: Working equations for piezoelectric actuators and sensors. J. Microelectromech. Sys., 8, (1999), 529–533.CrossRefGoogle Scholar
[10]Senturia, S.D.: Microsystem Design, 4th ed., Kluwer Academic Publishers, Dordrecht, (2002), 216Google Scholar
[11]Kuijk, E.K.: A precision reference voltage source. IEEE J. Solid State Circuit, SC-8, 3, (1973)Google Scholar