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Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz

Published online by Cambridge University Press:  11 June 2013

Aritra Acharyya ,
Jit Chakraborty ,
Kausik Das ,
Subir Datta ,
Pritam De ,
Suranjana Banerjee  and
J.P. Banerjee
Aritra Acharyya*
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721
Jit Chakraborty
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Kausik Das
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Subir Datta
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Pritam De
Affiliation:
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
Suranjana Banerjee
Affiliation:
Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly, West Bengal 712121, India
J.P. Banerjee
Affiliation:
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India. Phone: +91 9432979721
*
Corresponding author: A. Acharyya Email: [email protected]
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Abstract

Large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out in this paper using an L-S simulation method developed by the authors based on non-sinusoidal voltage excitation (NSVE) model. L-S simulation results show that the device is capable of delivering peak RF power of 657.64 mW with 8.25% conversion efficiency at 94 GHz for 50% voltage modulation; whereas RF power output and efficiency reduce to 89.61 mW and 2.22% respectively at 0.5 THz for same voltage modulation. Effect of parasitic series resistance on the L-S properties of DDR Si IMPATTs is also investigated, which shows that the decrease in RF power output and conversion efficiency of the device due to series resistance is more pronounced at higher frequencies especially at the THz regime. The NSVE L-S simulation results are compared with well established double-iterative field maximum (DEFM) small-signal (S-S) simulation results and finally both are compared with the experimental results. The comparative study shows that the proposed NSVE L-S simulation results are in closer agreement with experimental results as compared to those of DEFM S-S simulation.

Keywords

Avalanche response timeDDR silicon IMPATTsLarge-signal simulationMillimeter-waveThermal designTerahertz regime
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Issue 5 , October 2013 , pp. 567 - 578
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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