Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-22T08:23:06.105Z Has data issue: false hasContentIssue false
  • English
  • Français

InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications

Published online by Cambridge University Press:  27 November 2017

Stéphane Piotrowicz ,
Jean-Claude Jacquet ,
Piero Gamarra ,
Olivier Patard ,
Christian Dua ,
Eric Chartier ,
Nicolas Michel ,
Mourad Oualli ,
Cedric Lacam  and
Clément Potier
...Show all authors
Stéphane Piotrowicz*
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Jean-Claude Jacquet
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Piero Gamarra
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Olivier Patard
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Christian Dua
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Eric Chartier
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Nicolas Michel
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Mourad Oualli
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Cedric Lacam
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Clément Potier
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Philippe Altuntas
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Sylvain Delage
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
*
Corresponding author: S. Piotrowicz Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents performances achieved with InAlGaN/GaN HEMTs with 0.15 µm gate length on SiC substrate. Technology Computer Aided Design simulations were used to optimize the heterostructure. Special attention was paid to the design of the buffer structure. I-V measurements with DC and pulsed bias voltages were performed. CW measurements at millimeter waves were also carried out and are detailed in the following sections. The technology, optimized for power applications up to 45 GHz, demonstrates a current gain cut-off frequency FT of 70 GHz and a maximum available gain cut-off frequency FMAG of 140 GHz. CW Load-pull power measurements at 30 GHz enable to achieve a maximum PAE of 41% associated with an output power density of 3.5 W/mm when biased at VDS = 20 V. These devices, with an improved buffer structure show, reduced recovery time in pulsed operating conditions. These improved characteristics should have a positive impact for pulsed or modulated signal applications.

Keywords

InAlGaN HEMTPower DevicesPower characterizations
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 10 , Special Issue 1: Journee Nationale des Micro-ondes 2017 , February 2018 , pp. 39 - 46
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Crespo, A. et al. : High power Ka-band performance of AlInN/GaN HEMT with 9.8-nm thin barrier. IEEE Electron Device Lett., 31 (1) (2010), 2–4.CrossRefGoogle Scholar
[2]Jardel, O. et al. : First demonstration of AlInN/GaN HEMTs amplifiers at K-Band. IMS2012 [DOI: 10.1109/MWSYM.2012.6259551].CrossRefGoogle Scholar
[3]Dadgar, A. et al. : High current AlInN/GaN field effect transistors. Phys. Status Solidi (A), 202 (5) (2005), 832–836Google Scholar
[4]Piotrowicz, S. et al. : 12 W/mm with 0.15 µm InAlN/GaN HEMTs on SiC technology for K and Ka-bands applications, in Int. Microwave Symp. (IMS 2014).Google Scholar
[5]Tirelli, S.; Marti, D.; Lugani, L.; Carlin, J-F.; Grandjean, N.; Bolognesi, C.R.: AlN-capped AlInN/GaN high electron mobility transistors with 4.5 W/mm output power at 40 GHz. Jpn. J. Appl. Phys., 52 (2013), 08JN16.Google Scholar
[6]Niida, Y. et al. : 3.6 W/mm High Power Density W-band InAlGaN/GaN HEMT MMIC Power Amplifier. DOI: 10.1109/PAWR.2016.7440153.Google Scholar
[7]Kuzmík, J. et al. : Self-heating in GaN transistors designed for high-power operation. IEEE Trans. Electron Devices, 10 (2014), 3429–3434.Google Scholar
[8]Ben Ammar, H. et al. : Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure. Phys. Status Solidi A, 214 (4) (2017), 1600441. DOI: 10.1002/pssa.201600441.Google Scholar
[9]Uren, M.J. et al. : Punch-through in short-channel AlGaN/GaN HFETs. IEEE Trans. Electron Devices, 53 (2) (2006), 395–398.Google Scholar
[10]Uren, M.J. et al. : Control of short-channel effects in GaN/AlGaN HFETs, in Proc. of the 1st European Microwave Integrated Circuits Conf..Google Scholar
[11]Heikman, S.; Keller, S.; DenBaars, S.P.; Mishra, U.K.: Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition. Appl. Phys. Lett., 81 (2002), 439–441.Google Scholar
[12]Lee, H.-S.; Piedra, D.; Sun, M.; Gao, X.; Guo, S.; Palacios, T.: 3000-V 4.3-mΩ cm2 InAlN/GaN MOSHEMTs with AlGaN back barrier. IEEE Electron Device Lett., 33 (7) (2012), 982–984.Google Scholar
[13]Lee, D.S.; Gao, X.; Guo, S.; Palacios, T.: InAlN/GaN HEMTs with AlGaN back barriers. IEEE Electron Device Lett., 32 (5) (2011), 617–619.Google Scholar
[14]Kamath, A. et al. : Double-channel AlGaN/GaN high electron mobility transistor with back barriers. IEEE Electron Device Lett., 33 (12) (2012), 1690–1692.Google Scholar