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Ideal amplification of broadband signals

Published online by Cambridge University Press:  09 April 2013

Ron McCallister*
Affiliation:
Crestcom, Inc., Scottsdale, AZ, 85258, USA
*
Corresponding author: R. McCallister Email: [email protected]

Abstract

This paper describes a digital signal processing (DSP) method for achieving “ideal” amplification, maximizing both the average output signal power and power-added-efficiency for any signal waveform and any power amplifier (PA) transfer characteristic. Detailed algorithms are described for optimally accomplishing peak reduction (PR), predistortion (PD) linearization, and integration of these DSP techniques with envelope tracking PAs. Hardware characterization results validate the theories of PD and PR operation.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

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References

REFERENCES

[1]McCallister, R. et al. : Radiation hardened modulator ASIC for high data rate communications, in 18th Int. Communication Satellite Systems Conf. Record, Oakland, California, April 10–14, 2000 pp. 229234.Google Scholar
[2]May, T.; Rohling, H.: Reducing the peak to average power ratio of OFDM and radio transmission systems. IEEE Veh. Technol. Conf., 3 (1998), 24742478.Google Scholar
[3]Shearer, D.; Sills, J.: U.S. Patent 6928121, filed September 28, 2001.Google Scholar
[4]Armstrong, J.: New OFDM peak-to-average power reduction scheme, in Proc. of IEEE Vehicular Technology Conf., Rhodes, Greece, May 2001, 756760.Google Scholar
[5]McCallister, R.: U.S. Patent 7295816, filed December 9, 2003.Google Scholar
[6]McCallister, R.; Brombaugh, E.: U.S. Patent 7783260, filed April 27, 2006.Google Scholar
[7]Texas Instruments GC1115 Crest Factor Reduction Processor, http://www.ti.com/lit/ds/symlink/gc1115.pdfGoogle Scholar
[8]Ciochina, C.; Sari, H.: A review of OFDMA and single-carrier FDMA, in 2010 European Wireless Conf., 12–15 April 2010, 706710.Google Scholar
[10]Weber III, W.: The use of TWT amplifiers in m-ary amplitude and phase-shift keying systems. In Proc. of ICC'75, San Francisco, CA, June 1975, pp. 36.1736.21.Google Scholar
[11]Davis, R.; Boyd, R.: U.S. Patent 4291277, filed May 16, 1979.Google Scholar
[12]Cavers, J.: U.S. Patent 5049832, filed April 20, 1990.Google Scholar
[13]Morgan, D.: A generalized memory polynomial model for digital predistortion of RF power amplifiers. IEEE Trans. Signal Process., 54 (10) 2006, 38523860.CrossRefGoogle Scholar
[15]Saleh, A.; Wazowicz, M.: Efficient linear amplification of varying-envelope signals using FETs with parabolic transfer characteristics. IEEE Trans. Microwav. Theory Tech., 33 (8) (1985), 703710.Google Scholar
[16]Wisherd, D.: U.S. Patent 5272450, filed June 20, 1991.Google Scholar
[17]Khanifar, A.: U.S. Patent 7034620, filed April 8, 2003.Google Scholar
[18]Ibáñez-Díaz, J. et al. : Nonlinearity estimation in power amplifiers based on subsampled temporal data. IEEE Trans. Instrum. Meas., 54 (10) (2006), 3852–386.Google Scholar
[19]Chia-Hsiang, Y. et al. : Power and area minimization of reconfigurable FFT processors: a 3GPP-LTE example. IEEE J. Solid-State Circuits, 47 (00) (2012), 757768.Google Scholar
[20]Buoli, C.; Abbiati, A.; Riccardi, D.: Microwave power amplifier with “Envelope Controlled” drain power supply, in 25th European Microwave Conf., September 1995, 3135.Google Scholar
[21]Kwak, M. et al. : Design of a wideband high-voltage high-efficiency BiCMOS envelope amplifier for micro-base-station RF power amplifiers. IEEE Trans. Microw. Theory Tech., 60 (6) (2012), 18501861.Google Scholar
[22]Sahu, B. et al. : System-level requirements of dc-dc converters for dynamic power supplies of power amplifiers, in Proc. of the 2002 IEEE Asia-Pacific Conf. on ASICs, August 6–8, 2002, Taipei, Taiwan, pp. 153156.Google Scholar
[23]Larson, L. et al. : Intelligent transmitters and power amplifiers for next generation wireless communications, ewh.ieee.org/r6/phoenix/wad/Handouts/LarsonMTTPAtalk.pdfGoogle Scholar
[24]Angelov, I. et al. : Compact, equivalent circuit models for GaN, SiC, GaAs and CMOS FET, www.mos-ak.org/baltimore/.../02_Angelov_MOS-AK_Baltimore.pdfGoogle Scholar
[25]Aarts, A. et al. : Compact modeling of high-voltage LDMOS devices including quasi-saturation. IEEE Trans. Electron Devices, 53 (4) (2006), 897902.Google Scholar
[26]McCallister, R.; Brombaugh, E.: U.S. Patent 7570931, filed June 2, 2000.Google Scholar