Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-23T03:51:42.478Z Has data issue: false hasContentIssue false

A homodyne transceiver MMIC using SiGe:C technology for 60 GHz wireless applications

Published online by Cambridge University Press:  19 April 2011

Hans Peter Forstner*
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
Markus Ortner
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
Ludger Verweyen
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
Herbert Knapp
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany.
*
Corresponding author: H. P. Forstner Email: [email protected]

Abstract

A highly integrated transceiver microwave monolithic integrated circuit (MMIC) manufactured in a 200-GHz SiGe:C production technology is presented, applicable for sensing- and broadband communication applications. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises an LO signal generation unit based on a wideband 60 GHz fundamental Voltage Controlled Oscillator (VCO) and an on-chip prescaler, covering the full operational frequency band of 57–64 GHz. Within this bandwidth, the upconverter exhibits an upconversion gain of 23.6–26.4 dB and a maximum output-referred 1-dB compression point of 14 dBm. The downconverter provides a Double Sideband (DSB) noise figure of 9–12 dB with a downconversion gain of 37–71 dB. On chip AC-coupling of the receiver IF-output with a lower −3 dB cut-off frequency as low as 16 kHz eliminates mixer DC-offsets and enables on-chip Intermediate Frequency (IF) amplification. The whole transceiver MMIC draws a current of 415 mA from a single 3.3 V supply and requires few components externally to the chip.

Type
Research Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Floyd, B.: Short course: SiGe BiCMOS transceivers for millimeter-wave in Proc. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), September 2007.Google Scholar
[2]Pinel, S. et al. : A 90 nm CMOS 60 GHz radio, in IEEE ISSCC Dig., February 2008, 130131.Google Scholar
[3]Grass, E. et al. : 60 GHz SiGe-BiCMOS radio for OFDM transmission, in IEEE Int. Symp. on Circuits and Systems, 2007, ISCAS 2007, 1979–1982.CrossRefGoogle Scholar
[4]Wang, C.H. et al. : A 60 GHz transmitter with integrated antenna in 0.18 µm SiGe BiCMOS technology, in IEEE Int. Solid-State Circuits Conf. ISSCC, September 2006.Google Scholar
[5]Tomkins, A.; Aroca, R.A.; Yamamoto, T.; Nicolson, S.T.; Doi, Y.; Voinigescu, S.P.: A zero-IF 60 GHz 65 nm CMOS transceiver with direct BPSK modulation demonstrating up to 6 Gb/s data rates over a 2 m wireless link. IEEE J. Solid-State Circuits, 44(8), (2009), pp. 20852099.CrossRefGoogle Scholar
[6]Marcu, C. et al. : A 90 nm CMOS low-power 60 GHz transceiver with integrated baseband circuitry, in IEEE Int. Solid-State Circuits Conf., Digest of Technical Papers, February 2009, 314315.CrossRefGoogle Scholar
[7]Forstner, H.P.; Ortner, M.; Verweyen, L.: A fully integrated homodyne upconverter MMIC in SiGe:C for 60 GHz wireless applications, in 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Phoenix, AZ, January 2011.CrossRefGoogle Scholar
[8]Ortner, M.; Forstner, H.P.; Verweyen, L.: A fully integrated homodyne downconverter MMIC in SiGe:C for 60 GHz wireless applications, in 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Phoenix, AZ, January 2011.CrossRefGoogle Scholar
[9]Böck, J. et al. : SiGe bipolar technology for automotive radar applications, in Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), September 2004, 8487.Google Scholar
[10]Li, H.; Rein, H.-M.; Suttorp, T.; Böck, J.: Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100 GHz. IEEE J. Solid-State Circuits, 39(10), (2004), 16501658.CrossRefGoogle Scholar
[11]Notten, M.G.M.; Veenstra, H.: 60 GHz quadrature signal generation with a single phase VCO and polyphase filter in a 0.25 µm SiGe BiCMOS technology, in Proc. of the Bipolar/BiCMOS Circuits and Technology Meeting, Monterey, CA, October 2008.CrossRefGoogle Scholar
[12]Tong, Z.; Stelzer, A.: A millimeter-wave transition from microstrip to waveguide using a differential microstrip antenna, in Proc. 40th European Microwave Conf., Paris, September 2010.Google Scholar
[13]Razavi, B.: Design considerations for direct-conversion receivers. Circuits and systems II: analog and digital signal processing. IEEE Circuits Syst. Soc., 44(6), (1997), 428435.Google Scholar