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High-power monolithic AlGaN/GaN high electron mobility transistor switches

Published online by Cambridge University Press:  19 June 2009

Vincenzo Alleva ,
Andrea Bettidi ,
Walter Ciccognani ,
Marco De Dominicis ,
Mauro Ferrari ,
Claudio Lanzieri ,
Ernesto Limiti  and
Marco Peroni
Vincenzo Alleva
Affiliation:
Hardware Design Department, Elettronica SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Andrea Bettidi
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Walter Ciccognani
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Marco De Dominicis*
Affiliation:
Hardware Design Department, Elettronica SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Mauro Ferrari
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Claudio Lanzieri
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Ernesto Limiti
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Marco Peroni
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
*
Corresponding author: M. De Dominicis E-mail: [email protected]
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Abstract

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

Keywords

AlGaN/GaNMonolithic microwave integrated circuit (MMIC)Power switch
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 339 - 345
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

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