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High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology

Published online by Cambridge University Press:  03 March 2011

Daniel Lopez-Diaz ,
Ingmar Kallfass ,
Axel Tessmann ,
Rainer Weber ,
Hermann Massler ,
Arnulf Leuther ,
Michael Schlechtweg  and
Oliver Ambacher
Daniel Lopez-Diaz*
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany.
Ingmar Kallfass
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany. Karlsruhe Institute of Technology, Institut für Hochfrequenztechnik und Elektronik, 76131 Karlsruhe, Germany.
Axel Tessmann
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany.
Rainer Weber
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany.
Hermann Massler
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany.
Arnulf Leuther
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany.
Michael Schlechtweg
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany.
Oliver Ambacher
Affiliation:
Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: D. Lopez-Diaz Email: [email protected]
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Abstract

Wireless data communication is pushing towards 60 GHz and will most likely be served by SiGe and Complementary Metal Oxide Semiconductor (CMOS) technologies in the consumer market. Nevertheless, some applications are imposing superior performance requirements on the analog frontend, and employing III-V compound semiconductors can provide significant advantages with respect to transmitter power and noise figure. In this paper, we present essential building blocks and a novel single-chip low complexity transceiver Monolithic Microwave Integrated Circuit (MMIC) with integrated antenna switches for 60 GHz communication, fabricated in a 100 nm metamorphic high electron mobility transistor (mHEMT) technology. This technology features a measured noise figure of <2.5 dB in low-noise amplifiers at 60 GHz and the realized medium power amplifiers achieve more than 20 dBm saturated output power. Integrated antenna switches with an insertion loss of less than 1.5 dB enable the integration of the transmit and the receive stages on a single chip. A single-chip transceiver with external subharmonic Local Oscillator (LO) supply for its I/Q down- and up-converter achieves a linear conversion gain in both, the Transmit (Tx) and the Receive (Rx) paths, of more than 10 dB.

Keywords

Circuit design and applicationsLow-noise and communication receivers60 GHz
Type
Research Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 2: 60 GHz Wireless Communication Circuits and Systems , April 2011 , pp. 107 - 113
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

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