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Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis

Published online by Cambridge University Press:  15 October 2013

Núria Torres Matabosch ,
Fabio Coccetti ,
Mehmet Kaynak ,
Beatrice Espana ,
Bernd Tillack  and
Jean-Louis Cazaux
Núria Torres Matabosch*
Affiliation:
CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France
Fabio Coccetti
Affiliation:
CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France
Mehmet Kaynak
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Beatrice Espana
Affiliation:
Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse, France
Bernd Tillack
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Jean-Louis Cazaux
Affiliation:
Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse, France
*
Corresponding author: N. Torres Matabosch E-mail: [email protected]
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Abstract

An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.

Keywords

RF-MEMS and MOEMSModellingSimulation and characterizations of devices and circuits
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 1: IJMWT Special Issue on the 2013 National Microwave Days in France , February 2014 , pp. 73 - 81
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

REFERENCES

[1]De Wolf, I.: Reliability of MEMS, in Proc. 7th Int. Conf. Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSime 2006), 2006, 1–6.Google Scholar
[2]Lucyszyn, S. (Ed.): Advanced RF MEMS, Cambridge University Press, Cambridge, 2010.CrossRefGoogle Scholar
[3]Bordas, C. et al. : Carbon nanotube based dielectric for enhanced RF MEMS reliability, in 2007 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Honolulu, Hawaii, June 2007, 375–378.Google Scholar
[4]Goldsmith, C. et al. : Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches, in 2010 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Anaheim, California, May 2010, 1246–1249.Google Scholar
[5]Goldsmith, C.L.: United States Patent no: 6608268B1, August 2003.Google Scholar
[6]Feixiang, K. et al. : A ruthenium-based multimetal-contact RF MEMS switch with a corrugated diaphragm. J. Microelectromech. Syst., 17 (6) (2008), 1447–1459.CrossRefGoogle Scholar
[7]Nguyen, C.T.C.: The harsh environment robust micromechanical technology (HERMiT) program: success and some unfinished business, in 2012 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Montreal, Canada, June 2012, 1–3.Google Scholar
[8]Kaynak, M. et al. : BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique, in 2010 IEEE Int. Electron Devices Meeting (IEDM), 2010, 36.5.1–36.5.4.CrossRefGoogle Scholar
[9]Kaynak, M. et al. : RF-MEMS switch module in a 0.25 µm BiCMOS technology, in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 16–18 January 2012, 25–28.Google Scholar
[10]Kaynak, M. et al. : Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads, 2012 IEEE MTT-S Int. Microwave Symp. Digest (MTT), 17–22 June 2012, 1–3.CrossRefGoogle Scholar
[11]Torres Matabosch, N. et al. Accurate and Versatile. Equivalent Circuit Model for RF-MEMS Circuit. Optimization in BiCMOS. Technology, in 2012 European Microwave Integrated Circuits Conf. (EuMIC), October 2012.Google Scholar
[12]Dickson, T.O. et al. : 30–100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits. IEEE Trans. Microwave Theory and Techniques, 53 (1) (2005), 123–133.CrossRefGoogle Scholar
[13]Simons, R.N.: Coplanar Waveguide Circuits Components & Systems, John Wiley & Sons, New York, 2012.Google Scholar
[14]Vendier, O.: RF-MEMS for space applications, in 2012 European Microwave Integrated Circuits Conf. (EuMIC), RF-MEMS for Mm-wave Reconfigurable ICs Workshop, November 2012.Google Scholar
[15]Torres Matabosch, N.: Design for reliability applied to RF-MEMS devices and circuits issued from different TRL environments, Ph.D. dissertation, Université Paul Sabatier – Toulouse III, 2013.Google Scholar
[16]Rebeiz, G.M.: RF MEMS: Theory, Design, and Technology, Wiley, New York, 2003, 87–104.CrossRefGoogle Scholar