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Dynamic behavioral modeling of RF power amplifiers based on decomposed piecewise machine learning technique

Published online by Cambridge University Press:  28 August 2020

Jialin Cai Open the ORCID record for Jialin Cai [Opens in a new window] ,
Justin B. King ,
Chao Yu ,
Baicao Pan ,
Lingling Sun  and
Jun Liu
Jialin Cai*
Affiliation:
Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing, China
Justin B. King
Affiliation:
RF and Microwave Research Group at Trinity College Dublin, Dublin, Ireland
Chao Yu
Affiliation:
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing, China
Baicao Pan
Affiliation:
Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Lingling Sun
Affiliation:
Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
Jun Liu
Affiliation:
Key Laboratory of RF Circuit and System, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
*
Author for correspondence: Jialin Cai, E-mail: [email protected]
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Abstract

Multi-device radio frequency power amplifiers (PAs) often exhibit strongly non-linear behavior in combination with long-term memory effects, leading to an extremely challenging model development cycle. This paper presents a new, dynamic, behavioral modeling technique, based on a combination of the real-valued decomposed piecewise method and concepts from the field of machine learning. The underlying theory of the proposed modeling technique is provided, along with a detailed modeling procedure. Experimental results show that the proposed decomposed piecewise support vector regression (SVR) model leads to significant performance improvements when compared with standard SVR models for both single transistor and multi-transistor PAs. Different model thresholds are used to test the proposed model performance for both PA types. For the single-transistor PA, modeled using only one partition, an approximately 10 dB normalized mean square error (NMSE) reduction is seen when compared with the standard SVR model. For the same PA, when utilizing two partitions, the reduction improves to 14 dB. When applied to a multi-device Doherty PA, the NMSE between model and measurement data is −50 dB, representing more than 10 dB improvement compared with the standard SVR model.

Keywords

Linear and non-linear CAD techniquesmodelingsimulation and characterizations of devices and circuits
Type
Power Amplifiers
Information
International Journal of Microwave and Wireless Technologies , Volume 13 , Issue 4 , May 2021 , pp. 315 - 321
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Copyright
Copyright © The Author(s), 2020. Published by Cambridge University Press in association with the European Microwave Association.

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