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Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers

Published online by Cambridge University Press:  24 May 2013

A. Déchansiaud*
Affiliation:
XLIM, UMR CNRS 6172, 7 rue Jules Valles, 19100 Brive la Gaillarde, France. Phone: +33 561 111 122
R. Sommet
Affiliation:
XLIM, UMR CNRS 6172, 7 rue Jules Valles, 19100 Brive la Gaillarde, France. Phone: +33 561 111 122
T. Reveyrand
Affiliation:
XLIM, UMR CNRS 6172, 7 rue Jules Valles, 19100 Brive la Gaillarde, France. Phone: +33 561 111 122
D. Bouw
Affiliation:
United Monolithic Semiconductors, Batiment Charmille, Parc SILIC de Villebon-Courtaboeuf, 10 avenue du Quebec, 91140 Villebon-sur-Yvette, France
C. Chang
Affiliation:
United Monolithic Semiconductors, Batiment Charmille, Parc SILIC de Villebon-Courtaboeuf, 10 avenue du Quebec, 91140 Villebon-sur-Yvette, France
M. Camiade
Affiliation:
United Monolithic Semiconductors, Batiment Charmille, Parc SILIC de Villebon-Courtaboeuf, 10 avenue du Quebec, 91140 Villebon-sur-Yvette, France
F. Deborgies
Affiliation:
European Space Agency, Keplerlaan 1 - NL 2201 AZ Noordwijk ZH, Netherlands
R. Quéré
Affiliation:
XLIM, UMR CNRS 6172, 7 rue Jules Valles, 19100 Brive la Gaillarde, France. Phone: +33 561 111 122
*
Corresponding author: A. Déchansiaud Email: [email protected]

Abstract

This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

REFERENCES

[1]Lin, C.H. et al. : A compact 6.5-W PHEMT MMIC power Amplifier for Ku-band applications. IEEE Microw. Wirel. Compon. Lett., 17(2) (2007), 154156.Google Scholar
[2]Zhang, Q.; Brown, S.A.: Fully monolithic 8 watt Ku-band HPA. IEEE MTT-S Int. Microw. Symp. Digest, 2 (2004), 11611164.Google Scholar
[3]Bessemoulin, A.; Suh, Y.H.; Richardson, D.; Mahon, S.J.; Harvey, J.T.: A compact 500 mW Ku-band power amplifier MMIC in 3 × 3 mm2 quad flat (QFN) packages, in Proc. 1st European Microwave Integrated Circuits Conf., 2006, 229232.Google Scholar
[4]UMS, pph25x design kit, Internal report.Google Scholar
[5]Martin, A. et al. : Balanced AlGaN/GaN HEMT cascode cells: design method for wideband distributed amplifiers. Electron. Lett., 44 (2008), 116117.Google Scholar
[6]Fraysse, J.P.; Viaud, J.P.; Campovecchio, M.; Auxemery, P.; Quere, R.: A 2 W, high efficiency, 2-8 GHz, cascode HBT MMIC distributed PA. IEEE MTT-S Int. Microw. Symp. Digest, 1 (2000), 529532.Google Scholar
[7]Darwish, A.; Hung, A.; Viveiros, E.; Kao, M.: Multi-octave GaN MMIC amplifier. IEEE MTT-S Int. Microw. Symp. Digest, 2010, 141144.Google Scholar
[8]Dennler, P.; van Raay, F.; Seelmann-Eggebert, M.; Quay, R.; Ambacher, O.: Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications. IEEE MTT-S Int. Microw. Symp. Digest, 2011, 14.Google Scholar
[9]Larique, E.; et al. : Linear and nonlinear FET modeling applying an electromagnetic and electrical hybrid software. IEEE MTT-S Int. Microw. Symp. Digest, 47 (1999), 915918.Google Scholar
[10]Sowlati, T.; Leenaerts, D.M.W.: A 2.4-GHz 0.18-µm CMOS self-biased cascode power amplifier. IEEE J. Solid-State Circuits, 38 (2003), 13181324.Google Scholar
[11]Suarez, A.: Analysis and Design of Autonommous Microwave Circuits, Stability Analysis Using Harmonic Balance, chapter 6, Wiley-IEEE Press January 2009, University of Cantabria, Spain. 343350.Google Scholar
[12]UMS, Low Cost Ku-Band High Power Amplifiers Development for VSAT Ground Terminals, Internal Report, the department C2S2 of XLIM laboratory, at University of Limoges, 2009Google Scholar
[13]Dechansiaud, A.: Conception, modélisation et caractérisation de cellules de puissance innovantes en technologie MMIC pour des applications spatiales, PhD report, at the department C2S2 of XLIM laboratory, University of Limoges, 2012Google Scholar