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X-band T/R-module front-end based on GaN MMICs

Published online by Cambridge University Press:  22 June 2009

Patrick Schuh ,
Hardy Sledzik ,
Rolf Reber ,
Andreas Fleckenstein ,
Ralf Leberer ,
Martin Oppermann ,
Rüdiger Quay ,
Friedbert van Raay ,
Matthias Seelmann-Eggebert  and
Rudolf Kiefer
...Show all authors
Patrick Schuh*
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Hardy Sledzik
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Rolf Reber
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Andreas Fleckenstein
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Ralf Leberer
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Martin Oppermann
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Rüdiger Quay
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Friedbert van Raay
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Michael Mikulla
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: P. Schuh Email: [email protected]
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Abstract

Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

Keywords

AlGaN/GaNMMICsT/R moduleX-band
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 387 - 394
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

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