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Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Published online by Cambridge University Press:  18 February 2013

Jérôme Chéron ,
Michel Campovecchio ,
Denis Barataud ,
Tibault Reveyrand ,
Michel Stanislawiak ,
Philippe Eudeline  and
Didier Floriot
Jérôme Chéron
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Michel Campovecchio*
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Denis Barataud
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Tibault Reveyrand
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Michel Stanislawiak
Affiliation:
Thales Air System, ZI du Mont Jarret, Ymare, 76520 Boos, France
Philippe Eudeline
Affiliation:
Thales Air System, ZI du Mont Jarret, Ymare, 76520 Boos, France
Didier Floriot
Affiliation:
UMS, Parc Silic de Villebon-Courtaboeuf, 10 Avenue du Québec, 91140 Villebon-sur-Yvette, France
*
Corresponding author: M. Campovecchio Email: [email protected]
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Abstract

This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50 Ω environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package.

Keywords

BandwidthHarmonic impedancesHEMTPAES-band
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Issue 4 , August 2013 , pp. 437 - 445
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

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