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SIP antenna on 0.13 µm SiGe technology at 79 GHz for SRR automotive radar

Published online by Cambridge University Press:  18 January 2010

Yenny Pinto*
Affiliation:
Lab-STICC/TELECOM Bretagne, CS 83818, 29238 Brest Cedex 03, France.
Christian Person
Affiliation:
Lab-STICC/TELECOM Bretagne, CS 83818, 29238 Brest Cedex 03, France.
Daniel Gloria
Affiliation:
STMicroelectronics, Technology R&D 850 Rue Jean Monnet, 38926 Crolles, France.
Andreia Cathelin
Affiliation:
STMicroelectronics, Technology R&D 850 Rue Jean Monnet, 38926 Crolles, France.
Didier Belot
Affiliation:
STMicroelectronics, Technology R&D 850 Rue Jean Monnet, 38926 Crolles, France.
Sébastien Pruvost
Affiliation:
STMicroelectronics, Technology R&D 850 Rue Jean Monnet, 38926 Crolles, France.
Robert Plana
Affiliation:
LAAS-CNRS, 7 avenue du colonel roche, 31077, Toulouse, France.
*
Corresponding author: Yenny Pinto Email: [email protected]

Abstract

This paper describes the analysis and the design of an integrated antenna on 0.13 µm SiGe BICMOS technology. A non-resonant dipole antenna integrated on SiGe is electromagnetically coupled to a radiating element reported on a printed circuit board (PCB) substrate. This integrated solution, also compatible with system in package (SIP) concept, provides significant improvements with respect to direct System On Chip (SoC) integration. The main objective of this SIP antenna lies on the optimization of integrated millimeter wave front-ends modules, considering the immediate antenna environment (especially the lossy substrate and technological dielectric/metallic levels), in order to achieve performances compatible with short range radar specifications at 79–81 GHz. One solution, using a RT/Rogers Duroid 6006 PCB (er = 6, thickness h = 127 µm), is presented, providing a 2.93 dBi gain, and 45% radiation efficiency antenna.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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